Magnetoresistive Device and a Writing Method for a Magnetoresistive Device

ABSTRACT

According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes at least two ferromagnetic soft layers, wherein the at least two ferromagnetic soft layers have different ranges of magnetization switching frequencies. Further embodiments provide a magnetoresistive device including at least two oscillating ferromagnetic structures, wherein ranges of operating current amplitudes at which oscillations are induced for the at least two oscillating ferromagnetic structures are different. According to further embodiments of the present invention, writing methods for the magnetoresistive devices are provided.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.13/623,741, filed Sep. 20, 2012, which claims priority to U.S.provisional application No. 61/537,591, filed 22 Sep. 2011.

TECHNICAL FIELD

Various embodiments relate to a magnetoresistive device and a writingmethod for a magnetoresistive device.

BACKGROUND

Until now, hard disk drive (HDD) offers an advantage of storing data atlow cost. At the same time, other types of memories such as flash memorycaught up and now represent a threat to HDD. Flash memory belongs to acategory of non-volatile memories (NVM). It allows the data to be storedeven when power is down or off.

The flash memory market is getting bigger but the cost per gigabit(Gbit) is higher than that of HDD. HDD technology is moving towardspatterned media where bits are made by lithography processes. The costper Gbit for HDD should not be increased by more than 10% or 20% inorder to remain competitive. This is one of the major challenges facingthe HDD technology.

A current trend is to develop non-volatile memories (NVM) beyond flashmemory, which is cheaper and has a high performance. Magnetoresistiverandom access memory (MRAM) and phase change random access memory(PC-RAM) represent good candidates for future NVM. It is expected thatspin transfer torque magnetoresistive random access memory (STT-MRAM)devices can have a cell less than 10 nm based on high magneticanisotropy materials used for the storage layer, such as orderedFePt-Ll₀. However, this is not possible for flash memory.

In order for MRAM to be industrially viable, there is a need to increasethe memory storage density of MRAM devices.

SUMMARY

According to an embodiment, a magnetoresistive device is provided. Themagnetoresistive device may include at least two ferromagnetic softlayers, wherein the at least two ferromagnetic soft layers havedifferent ranges of magnetization switching frequencies.

According to an embodiment, a writing method for a magnetoresistivedevice having a first ferromagnetic soft layer and a secondferromagnetic soft layer is provided. The writing method may includeapplying a signal with a magnetization switching frequency which iswithin either a range of magnetization switching frequencies of thefirst ferromagnetic soft layer or a range of magnetization switchingfrequencies of the second ferromagnetic soft layer.

According to an embodiment, a magnetoresistive device is provided. Themagnetoresistive device may include at least two oscillatingferromagnetic structures, wherein ranges of operating current amplitudesat which oscillations are induced for the at least two oscillatingferromagnetic structures are different.

According to an embodiment, a writing method for a magnetoresistivedevice having a first oscillating ferromagnetic structure and a secondoscillating ferromagnetic structure is provided. The writing method mayinclude applying a signal with an operating current amplitude which iswithin either a range of operating current amplitudes at whichoscillations are induced for the first oscillating ferromagneticstructure or a range of operating current amplitudes at whichoscillations are induced for the second oscillating ferromagneticstructure.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, like reference characters generally refer to the sameparts throughout the different views. The drawings are not necessarilyto scale, emphasis instead generally being placed upon illustrating theprinciples of the invention. In the following description, variousembodiments of the invention are described with reference to thefollowing drawings, in which:

FIG. 1A shows a schematic block diagram of a magnetoresistive device,according to various embodiments;

FIG. 1B illustrates a writing method for a magnetoresistive device,according to various embodiments;

FIG. 1C shows a schematic block diagram of a magnetoresistive device,according to various embodiments;

FIG. 1D illustrates a writing method for a magnetoresistive device,according to various embodiments;

FIG. 2A shows a schematic cross-sectional view of a magnetoresistivedevice, according to various embodiments;

FIG. 2B shows a schematic cross-sectional view of a magnetoresistivedevice, according to various embodiments;

FIG. 2C shows a schematic diagram illustrating the concept of frequencybandwidth for various embodiments;

FIGS. 3A to 3D show respective schematic cross-sectional views of anoscillating ferromagnetic structure, according to various embodiments;

FIG. 4 shows different configurations of magnetization and polarizationduring a switching process;

FIG. 5 shows a plot of macrospin simulation results of the criticalcurrent for P→AP and AP→P respectively when a 3 GHz oscillation isapplied, according to various embodiments;

FIG. 6 shows a plot of macrospin simulation results of the relationshipbetween the frequency bandwidth and the applied current density for P→APand AP→P switchings, according to various embodiments;

FIG. 7 shows a plot of macrospin simulation results of the relationshipbetween the optimum magnetization switching frequency and theperpendicular anisotropy field for P→AP and AP→P switchings, accordingto various embodiments;

FIG. 8 shows a plot of macrospin simulation results of the relationshipbetween the switching time and the applied oscillation frequency forP→AP and AP→P switchings for different perpendicular anisotropy fields,according to various embodiments;

FIGS. 9A and 9B show plots of macrospin simulation results of therespective perpendicular magnetization components, Mz, of twoferromagnetic soft layers for a 2-bit STT-MRAM device, as a function oftime, according to various embodiments;

FIG. 10 shows a plot of an oscillator's frequency as a function ofapplied current density;

FIGS. 11A and 11B show schematic cross-sectional views of themagnetoresistive device of FIG. 2A employing OSSS, in operation;

FIGS. 12A and 12B show plots of macrospin simulation results of therespective perpendicular magnetization components, Mz, of twoferromagnetic soft layers for a 2-bit STT-MRAM device, as a function oftime, according to various embodiments;

FIGS. 13A and 13B show schematic cross-sectional views of amagnetoresistive device, according to various embodiments; and

FIG. 14 shows a schematic cross-sectional view of a magnetoresistivedevice, according to various embodiments.

DETAILED DESCRIPTION

The following detailed description refers to the accompanying drawingsthat show, by way of illustration, specific details and embodiments inwhich the invention may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice theinvention. Other embodiments may be utilized and structural, logical,and electrical changes may be made without departing from the scope ofthe invention. The various embodiments are not necessarily mutuallyexclusive, as some embodiments can be combined with one or more otherembodiments to form new embodiments.

Embodiments described in the context of one of the methods or devicesare analogously valid for the other method or device. Similarly,embodiments described in the context of a method are analogously validfor a device, and vice versa.

Features that are described in the context of an embodiment maycorrespondingly be applicable to the same or similar features in theother embodiments. Features that are described in the context of anembodiment may correspondingly be applicable to the other embodiments,even if not explicitly described in these other embodiments.Furthermore, additions and/or combinations and/or alternatives asdescribed for a feature in the context of an embodiment maycorrespondingly be applicable to the same or similar feature in theother embodiments.

In the context of various embodiments, the phrase “at leastsubstantially” may include “exactly” and a variance of +/−5% thereof. Asan example and not limitations, “A is at least substantially same as B”may encompass embodiments where A is exactly the same as B, or where Amay be within a variance of +/−5%, for example of a value, of B, or viceversa.

In the context of various embodiments, the term “about” or“approximately” as applied to a numeric value encompasses the exactvalue and a variance of +/−5% of the value.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items.

Various embodiments relate to a non-volatile magnetic memory device, forexample a spin transfer torque magnetoresistive random access memory(STT-MRAM) multi-bit per cell device.

Various embodiments may provide multi-bit per cell for spin transfertorque magnetic memory with frequency selection switching scheme (FSSS)or oscillator selection switching scheme (OSSS).

Various embodiments may provide multi-bit per cell designs orconfigurations as an approach for increasing the memory storage densityin STT-MRAM devices. Various embodiments may provide a multi-bit percell magnetoresistive device (e.g. a magnetic memory element) withperpendicular magnetization or anisotropy, and spin torque switching.

Various embodiments may provide a magnetoresistive device that mayenable switching magnetization by a spin torque effect in perpendicularanisotropy, and a method for switching magnetization by the spin torqueeffect. The spin torque effect enables the magnetization orientation,for example of a ferromagnetic soft layer, to be switched by using aspin-polarized current or a spin transfer current.

Various embodiments may provide a magnetoresistive device (e.g. amagnetic memory element). The magnetoresistive device may be a giantmagnetoresistive (GMR) device or a tunnel magnetoresistive (TMR) device,with a current flowing perpendicular to the plane (CPP) direction.

Various embodiments may provide a multi-bit per cell spin transfertorque magnetoresistive random access memory (STT-MRAM) including atleast two soft layers or ferromagnetic soft layers that have differentresonance frequencies, and at least an oscillating ferromagneticstructure at the side of each ferromagnetic soft layer to assist theswitching of the magnetization orientation of the ferromagnetic softlayer by Frequency Induced Spin Torque Switching (FISTS). Each of theferromagnetic soft layers has a perpendicular anisotropy component. TheSTT-MRAM further includes at least one reference layer or ferromagnetichard layer, with a perpendicular anisotropy component, arranged on oneside of the ferromagnetic soft layers. In various embodiments, theoscillating ferromagnetic structure arranged on the other side of eachferromagnetic soft layer may generate an additional effective spintorque field or energy to assist the switching of the ferromagnetic softlayer magnetization. In various embodiments, the properties of eachferromagnetic soft layer and the corresponding oscillating ferromagneticstructure are chosen such that the switching of the ferromagnetic softlayer magnetization orientation may be performed only in a range offrequencies close to the resonance frequency of the ferromagnetic softlayer.

In various embodiments, through matching of the respective resonancefrequencies of the ferromagnetic soft layers and the oscillationfrequencies of the corresponding oscillating structures, themagnetization orientations of the ferromagnetic soft layers may beswitched independently. Such a Frequency Selection Switching Scheme(FSSS) may help to address any related overwriting issue that may occurin multi-bit per cell STT-MRAM. For example, the overwriting issue mayarise from delivering more current than required for the switching ofthe ferromagnetic soft layers during the writing process. Thisoversupply of the write current, over time, may cause or accelerate thedegradation of the performance of the device, thereby affecting itsreliability.

In various embodiments, a writing scheme using spin torque effect withselected frequencies to switch the magnetizations of themagnetoresistive devices having multi-bit per cell capability may beprovided. The writing scheme may be applied to embodiments having two ormore ferromagnetic soft layers, with associated additional ferromagnetichard layer(s).

Various embodiments may provide a multi-bit per cell spin transfertorque magnetoresistive random access memory (STT-MRAM) including atleast two soft layers or ferromagnetic soft layers that have differentresonance frequencies, and at least an oscillating ferromagneticstructure at the side of each ferromagnetic soft layer to assist theswitching of the magnetization of the ferromagnetic soft layer by anOscillator Selection Switching Scheme (OSSS). Each of the ferromagneticsoft layers has a perpendicular anisotropy component. The STT-MRAMfurther includes at least one reference layer or ferromagnetic hardlayer, with a perpendicular anisotropy component, arranged on one sideof the ferromagnetic soft layers. In various embodiments, theoscillating ferromagnetic structure arranged on the other side of eachferromagnetic soft layer may generate an additional effective spintorque field or energy to assist the switching of the ferromagnetic softlayer magnetization. In various embodiments, the oscillatingferromagnetic structures may be designed or engineered differently sothat they have different critical current densities or currentamplitudes.

In various embodiments, the Oscillator Selection Switching Scheme (OSSS)may also be employed even if the at least two ferromagnetic soft layershave the same resonance frequency. By design, the oscillating structuresare not “ON” at the same time, and therefore, the magnetizationorientation of only one ferromagnetic soft layer is switched at any onetime.

In various embodiments, through selection of the respective criticalcurrent densities of the oscillating ferromagnetic structures, themagnetizations orientation of the corresponding ferromagnetic softlayers may be switched independently. Such an Oscillator SelectionSwitching Scheme (OSSS) may help to address any related overwritingissue that may occur in multi-bit per cell STT-MRAM. For example, theoverwriting issue may arise from delivering more current than requiredfor the switching of the ferromagnetic soft layers during the writingprocess. This oversupply of the write current, over time, may cause oraccelerate the degradation of the performance of the device, therebyaffecting its reliability.

In various embodiments, a writing scheme using spin torque effect withselected critical current densities to switch the magnetizations of themagnetoresistive devices having multi-bit per cell capability may beprovided. The writing scheme may be applied to embodiments having two ormore ferromagnetic soft layers, with associated additional ferromagnetichard layer(s).

FIG. 1A shows a schematic block diagram of a magnetoresistive device100, according to various embodiments. The magnetoresistive device 100includes at least two ferromagnetic soft layers 102 (e.g. 204 a, 204 b,FIGS. 2A, 13A, 13B, 14), wherein the at least two ferromagnetic softlayers 102 have different ranges of magnetization switching frequencies.The range of magnetization switching frequencies of each ferromagneticsoft layer 102 may be a frequency bandwidth of the ferromagnetic softlayer 102.

In other words, the magnetoresistive device 100 may have two or moreferromagnetic soft layers 102, e.g. two, three, four, five or any highernumber of ferromagnetic soft layers 102. These ferromagnetic soft layers102 may form part of a magnetic junction of the magnetoresistive device100.

Each ferromagnetic soft layer 102 has a range of magnetization switchingfrequencies. In various embodiments, the range of magnetizationswitching frequencies of each ferromagnetic soft layer 102 may benon-overlapping, e.g. the range of magnetization switching frequenciesof a ferromagnetic soft layer 102 (e.g. 204 a) occurs at a frequencyrange different from that of another ferromagnetic soft layer 102 (e.g.204 b). In various embodiments, the range of magnetization switchingfrequencies of each ferromagnetic soft layer 102 may be substantiallynon-overlapping, e.g. the range of magnetization switching frequenciesof each ferromagnetic soft layer 102 has a tolerable overlapping region.This may mean that a small overlap, for example an overlap of a smallrange between the respective ranges of the magnetization switchingfrequencies of the ferromagnetic soft layers 102, may be tolerated aslong as there is a portion or region of the range of magnetizationswitching frequencies of each ferromagnetic soft layer 102 for whichindependent or individual switching of each ferromagnetic soft layer 102is possible.

It should be appreciated that the at least two ferromagnetic soft layers102 may have one or more ferromagnetic soft layers 102 that may havenon-overlapping ranges of magnetization switching frequencies, and/orone or more ferromagnetic soft layers 102 that may have substantiallynon-overlapping ranges of magnetization switching frequencies.

In various embodiments, the range of magnetization switching frequenciesof each ferromagnetic soft layer 102 may be close to a resonancefrequency of the ferromagnetic soft layer 102. Each ferromagnetic softlayer 102 may be associated with an optimum magnetization switchingfrequency that is within the range of magnetization switchingfrequencies of the ferromagnetic soft layer 102. The optimummagnetization switching frequency of each ferromagnetic soft layer 102may be close to or equal to a resonance frequency of the ferromagneticsoft layer 102.

In various embodiments, the range of magnetization switching frequenciesof each ferromagnetic soft layer 102 may be dependent on a currentdensity applied to the magnetoresistive device 100.

In various embodiments, each ferromagnetic soft layer 102 may have acorresponding oscillating ferromagnetic structure disposed on one sideof the ferromagnetic soft layer 102. In other words, themagnetoresistive device 100 may have an oscillating ferromagneticstructure corresponding to each ferromagnetic soft layer 102, anddisposed on one side of the ferromagnetic soft layer 102. Theseoscillating ferromagnetic structures (e.g. 206 a, 206 b), together withthe ferromagnetic soft layers 102, may form part of a magnetic junctionof the magnetoresistive device 100.

In various embodiments, the optimum magnetization switching frequency ofeach ferromagnetic soft layer 102 may be the magnetization switchingfrequency at which magnetization of the ferromagnetic soft layer 102 mayswitch in the fastest time (or shortest time) for a current pulse of aparticular amplitude and time width. The optimum magnetization switchingfrequency of each ferromagnetic soft layer 102 may be dependent on aperpendicular magnetic anisotropy field of the ferromagnetic soft layer102. Each ferromagnetic soft layer 102 may have a differentperpendicular magnetic anisotropy field. In various embodiments, theoptimum magnetization switching frequency of each ferromagnetic softlayer 102 may be close to an oscillation frequency of the correspondingoscillating ferromagnetic structure.

In various embodiments, the optimum magnetization switching frequency ofeach ferromagnetic soft layer 102 may be dependent on one or more of asaturation magnetization of the ferromagnetic soft layer 102 and athickness of the ferromagnetic soft layer 102. Each ferromagnetic softlayer 102 may have a different saturation magnetization and/or adifferent thickness.

In the context of various embodiments, the magnetoresistive device 100may include a first stack arrangement (e.g. 200, FIGS. 2A, 13A, 13B, 14)including a ferromagnetic hard layer (e.g. 202), a first ferromagneticsoft layer (e.g. 204 a), a second ferromagnetic soft layer (e.g. 204 b),a first oscillating ferromagnetic structure (e.g. 206 a), and a secondoscillating ferromagnetic structure (e.g. 206 b), wherein the firstoscillating ferromagnetic structure is disposed at one side of the firstferromagnetic soft layer and the second oscillating ferromagneticstructure is disposed at one side of the second ferromagnetic softlayer, and wherein the ferromagnetic hard layer is disposed at the otherside of each of the first ferromagnetic soft layer and the secondferromagnetic soft layer such that the ferromagnetic hard layer isdisposed between the first ferromagnetic soft layer and the secondferromagnetic soft layer. In other words, the at least two ferromagneticsoft layers 102 may include the first ferromagnetic soft layer and thesecond ferromagnetic soft layer as described above. The correspondingoscillating ferromagnetic structure disposed on one side of theferromagnetic soft layer 102 may include the first oscillatingferromagnetic structure and the second oscillating ferromagneticstructure as described above.

The first stack arrangement may further include a first separating layer(e.g. 208 a) disposed between the ferromagnetic hard layer and the firstferromagnetic soft layer, a second separating layer (e.g. 208 b)disposed between the ferromagnetic hard layer and the secondferromagnetic soft layer, a third separating layer (e.g. 210 a) disposedbetween the first oscillating ferromagnetic structure and the firstferromagnetic soft layer, and a fourth separating layer (e.g. 210 b)disposed between the second oscillating ferromagnetic structure and thesecond ferromagnetic soft layer.

In the context of various embodiments, the first separating layer, thesecond separating layer, the third separating layer and the fourthseparating layer include non-magnetic materials.

In the context of various embodiments, the first separating layer andthe second separating layer include non-conductive materials (e.g. aninsulator), e.g. magnesium oxide (MgO). By arranging insulators asseparating layers between the ferromagnetic hard layer with the firstferromagnetic soft layer and the second ferromagnetic soft layer, themagnetoresistive device 100 may be configured as a tunnelmagnetoresistive (TMR) device.

However, it should be appreciated that the first separating layer andthe second separating layer may include conductive materials (e.g. aconductor), e.g. copper (Cu). By arranging conductors as separatinglayers between the ferromagnetic hard layer with the first ferromagneticsoft layer and the second ferromagnetic soft layer, the magnetoresistivedevice 100 may be configured as a giant magnetoresistive (GMR) device.

In the context of various embodiments, the third separating layer andthe fourth separating layer include conductive materials (e.g. aconductor), e.g. copper (Cu).

In the context of various embodiments, one of or each of the firstseparating layer and the second separating layer may have a thicknessranging from about 0.4 nm to about 1.5 nm, e.g. about 0.4 nm to about1.0 nm, about 0.4 nm to about 0.8 nm, about 0.8 nm to about 1.5 nm orabout 0.6 nm to about 1.2 nm.

In the context of various embodiments, the first stack arrangement maybe or may form part of a 2-bit per cell spin transfer torquemagnetoresistive random access memory (STT-MRAM). In other words, themagnetoresistive device 100 with the first stack arrangement may provideone, two, three, or four resistance states, which may enable datastorage of up to two bits of information, thereby allowing multi-stateor multi-bit storage.

In the context of various embodiments, the magnetoresistive device 100may further include a second stack arrangement (e.g. 220, FIGS. 13A,13B) including a further ferromagnetic hard layer (e.g. 222, FIGS. 13A,13B), a third ferromagnetic soft layer (e.g. 224), and a thirdoscillating ferromagnetic structure (e.g. 226), wherein the thirdferromagnetic soft layer is disposed between the further ferromagnetichard layer and the third oscillating ferromagnetic structure. The secondstack arrangement may further include a fifth separating layer (e.g.228) disposed between the further ferromagnetic hard layer and the thirdferromagnetic soft layer, and a sixth separating layer (e.g. 230)disposed between the third ferromagnetic soft layer and the thirdoscillating ferromagnetic structure.

In the context of various embodiments, the fifth separating layer andthe sixth separating layer include non-magnetic materials.

In the context of various embodiments, the fifth separating layerincludes non-conductive materials (e.g. as insulator), e.g. magnesiumoxide (MgO). By arranging an insulator as a separating layer between thefurther ferromagnetic hard layer and the third ferromagnetic soft layer,the magnetoresistive device 100 may be configured as a tunnelmagnetoresistive (TMR) device.

However, it should be appreciated that the fifth separating layer mayinclude conductive materials (e.g. as conductor), e.g. copper (Cu). Byarranging a conductor as a separating layer between the furtherferromagnetic hard layer and the third ferromagnetic soft layer, themagnetoresistive device 100 may be configured as a giantmagnetoresistive (GMR) device.

In the context of various embodiments, the sixth separating layerincludes conductive materials (e.g. a conductor), e.g. copper (Cu).

In the context of various embodiments, the second stack arrangement maybe or may form part of a 1-bit per cell spin transfer torquemagnetoresistive random access memory (STT-MRAM).

In the context of various embodiments, the second stack arrangement maybe disposed above or below the first stack arrangement. In other words,the first stack arrangement and the second stack arrangement may bearranged one over the other. The magnetoresistive device 100 may furtherinclude a seventh separating layer (e.g. 1302) disposed between thesecond stack arrangement and the first stack arrangement. The seventhseparating layer may include non-magnetic materials. The seventhseparating layer may include conductive materials, e.g. copper (Cu).

In the context of various embodiments, the first stack arrangement andthe second stack arrangement may be or may form part of a 3-bit per cellspin transfer torque magnetoresistive random access memory (STT-MRAM).In other words, the magnetoresistive device 100 with the first stackarrangement and the second stack arrangement may provide one, two,three, four, five, six, seven or eight resistance states, which mayenable data storage of up to three bits of information, thereby allowingmulti-state or multi-bit storage.

In the context of various embodiments, the magnetoresistive device 100including the first stack arrangement may further include a furtherfirst stack arrangement (e.g. 1401, FIG. 14), e.g. a further stackarrangement similar to the first stack arrangement, wherein the furtherfirst stack arrangement is disposed above or below the first stackarrangement. In other words, the two first stack arrangements may bearranged one over the other. The magnetoresistive device 100 may furtherinclude an eighth separating layer (e.g. 1412) disposed between thefirst stack arrangement and the further first stack arrangement. Theeight separating layer may include non-magnetic materials. The eightseparating layer may include conductive materials, e.g. copper (Cu).

In the context of various embodiments, the first stack arrangement andthe further first stack arrangement may be or may form part of a 4-bitper cell spin transfer torque magnetoresistive random access memory(STT-MRAM). In other words, the magnetoresistive device 100 with thefirst stack arrangement and the further first stack arrangement mayprovide between one to sixteen resistance states, which may enable datastorage of up to four bits of information, thereby allowing multi-stateor multi-bit storage.

In the context of various embodiments, it should be appreciated that anyn-bit per cell spin transfer torque magnetoresistive random accessmemory (STT-MRAM) may be formed by providing a combination of any numberof the first stack arrangement, where each first stack arrangement mayprovide 2-bit per cell STT-MRAM, and/or any number of the second stackarrangement, where each second stack arrangement may provide 1-bit percell STT-MRAM. In the context of various embodiments, a conductive andnon-magnetic separating layer may be disposed between any two stackarrangements.

FIG. 1B illustrates a writing method 110 for a magnetoresistive device,according to various embodiments, where the magnetoresistive device mayhave a first ferromagnetic soft layer and a second ferromagnetic softlayer. For the writing method 110, a signal with a magnetizationswitching frequency which is within either a range of magnetizationswitching frequencies of the first ferromagnetic soft layer or a rangeof magnetization switching frequencies of the second ferromagnetic softlayer is applied.

When the magnetization switching frequency of the signal is within therange of magnetization switching frequencies of the first ferromagneticsoft layer, the magnetization of the first ferromagnetic soft layer isswitched, and when the magnetization switching frequency of the signalis within the range of magnetization switching frequencies of the secondferromagnetic soft layer, the magnetization of the second ferromagneticsoft layer is switched. In various embodiments, the range ofmagnetization switching frequencies of the first ferromagnetic softlayer may be non-overlapping or substantially non-overlapping with therange of magnetization switching frequencies of the second ferromagneticsoft layer, e.g. the ranges of the magnetization switching frequenciesof the first ferromagnetic soft layer and the second ferromagnetic softlayer may be different.

FIG. 1C shows a schematic block diagram of a magnetoresistive device120, according to various embodiments. The magnetoresistive device 120includes at least two oscillating ferromagnetic structures 122 (e.g. 206a, 206 b, FIGS. 2A, 13A, 13B, 14), wherein ranges of operating currentamplitudes (or current densities) at which oscillations are induced forthe at least two oscillating ferromagnetic structures 122 are different.

In other words, the magnetoresistive device 120 may have two or moreoscillating ferromagnetic structures 122, e.g. two, three, four, five orany higher number of oscillating ferromagnetic structures 122. Theseoscillating ferromagnetic structures 122 may form part of a magneticjunction of the magnetoresistive device 120.

The magnetoresistive device 120 may further include at least twoferromagnetic soft layers (e.g. 204 a, 204 b) wherein each oscillatingferromagnetic structure 122 may be disposed at one side of acorresponding ferromagnetic soft layer. In other words, themagnetoresistive device 120 may have a ferromagnetic soft layercorresponding to each oscillating ferromagnetic structure 122, anddisposed on one side of the oscillating ferromagnetic structure 122.These ferromagnetic soft layers, together with the oscillatingferromagnetic structures 122, may form part of a magnetic junction ofthe magnetoresistive device 100.

Each oscillating ferromagnetic structure 122 has a range of operatingcurrent amplitudes at which oscillations are induced. In variousembodiments, the ranges of operating current amplitudes at whichoscillations are induced for the at least two oscillating ferromagneticstructures 122 may be non-overlapping, e.g. the range of operatingcurrent amplitudes of an oscillating ferromagnetic structures 122 occursat a current amplitude range different from that of another oscillatingferromagnetic structures 122. In various embodiments, the ranges ofoperating current amplitudes at which oscillations are induced for theat least two oscillating ferromagnetic structures 122 may besubstantially non-overlapping, e.g. the ranges of operating currentamplitudes may have a tolerable overlapping region respectively. Thismay mean that a small overlap, for example an overlap of a small rangebetween the respective ranges of operating current amplitudes, may betolerated as long as there is a portion or region of the operatingcurrent amplitudes of each oscillating ferromagnetic structures 122 forwhich independent or individual switching of the correspondingferromagnetic soft layer is possible.

It should be appreciated that the at least two oscillating ferromagneticstructures 122 may have one or more oscillating ferromagnetic structures122 that may have non-overlapping ranges of operating currentamplitudes, and/or one or more oscillating ferromagnetic structures 122that may have substantially non-overlapping ranges of operating currentamplitudes.

In various embodiments, each ferromagnetic soft layer may configured toswitch magnetization from a parallel state to an anti-parallel state(P→AP) or from an anti-parallel state to a parallel state (AP→P) when anoperating current amplitude is within the range of operating currentamplitudes at which oscillations are induced for the correspondingoscillating ferromagnetic structure 122.

In various embodiments, each oscillating ferromagnetic structure 122 hasan oscillation frequency. The range of operating current amplitudes atwhich oscillations are induced for each oscillating ferromagneticstructure 122 and the oscillation frequency of each oscillatingferromagnetic structure 122 may be dependent on one or more of a groupof parameters consisting of Gilbert damping constant of the oscillatingferromagnetic structure, saturation magnetization of the oscillatingferromagnetic structure, perpendicular anisotropy field of theoscillating ferromagnetic structure and thickness of the oscillatingferromagnetic structure.

In the context of various embodiments, the magnetoresistive device 120may include a first stack arrangement e.g. 200, FIGS. 2A, 13A, 13B, 14)including a ferromagnetic hard layer (e.g. 202), a first ferromagneticsoft layer (e.g. 204 a), a second ferromagnetic soft layer (e.g. 204 b),a first oscillating ferromagnetic structure (e.g. 206 a), and a secondoscillating ferromagnetic structure (e.g. 206 b), wherein the firstoscillating ferromagnetic structure is disposed at one side of the firstferromagnetic soft layer and the second oscillating ferromagneticstructure is disposed at one side of the second ferromagnetic softlayer, and wherein the ferromagnetic hard layer is disposed at the otherside of each of the first ferromagnetic soft layer and the secondferromagnetic soft layer such that the ferromagnetic hard layer isdisposed between the first ferromagnetic soft layer and the secondferromagnetic soft layer. In other words, the at least two oscillatingferromagnetic structures 122 may include the first oscillatingferromagnetic structure and the second oscillating ferromagneticstructure as described above. The corresponding ferromagnetic soft layerdisposed on one side of the oscillating ferromagnetic structure 122 mayinclude the first ferromagnetic soft layer and the second ferromagneticsoft layer as described above.

The first stack arrangement may further include a first separating layer(e.g. 208 a) disposed between the ferromagnetic hard layer and the firstferromagnetic soft layer, a second separating layer (e.g. 208 b)disposed between the ferromagnetic hard layer and the secondferromagnetic soft layer, a third separating layer (e.g. 210 a) disposedbetween the first oscillating ferromagnetic structure and the firstferromagnetic soft layer, and a fourth separating layer (e.g. 210 b)disposed between the second oscillating ferromagnetic structure and thesecond ferromagnetic soft layer.

In the context of various embodiments, the first separating layer, thesecond separating layer, the third separating layer and the fourthseparating layer include non-magnetic materials.

In the context of various embodiments, the first separating layer andthe second separating layer include non-conductive materials (e.g. aninsulator), e.g. magnesium oxide (MgO). By arranging insulators asseparating layers between the ferromagnetic hard layer with the firstferromagnetic soft layer and the second ferromagnetic soft layer, themagnetoresistive device 120 may be configured as a tunnelmagnetoresistive (TMR) device.

However, it should be appreciated that the first separating layer andthe second separating layer may include conductive materials (e.g. aconductor), e.g. Cu. By arranging conductors as separating layersbetween the ferromagnetic hard layer with the first ferromagnetic softlayer and the second ferromagnetic soft layer, the magnetoresistivedevice 120 may be configured as a giant magnetoresistive (GMR) device.

In the context of various embodiments, the third separating layer andthe fourth separating layer include conductive materials (e.g. aconductor), e.g. copper (Cu).

In the context of various embodiments, one of or each of the firstseparating layer and the second separating layer may have a thicknessranging from about 0.4 nm to about 1.5 nm, e.g. about 0.4 nm to about1.0 nm, about 0.4 nm to about 0.8 nm, about 0.8 nm to about 1.5 nm orabout 0.6 nm to about 1.2 nm.

In the context of various embodiments, the first stack arrangement maybe or may form part of a 2-bit per cell spin transfer torquemagnetoresistive random access memory (STT-MRAM). In other words, themagnetoresistive device 120 with the first stack arrangement may provideone, two, three, or four resistance states, which may enable datastorage of up to two bits of information, thereby allowing multi-stateor multi-bit storage.

In the context of various embodiments, the magnetoresistive device 120may further include a second stack arrangement (e.g. 220, FIGS. 13A,13B) including a further ferromagnetic hard layer (e.g. 222), a thirdferromagnetic soft layer (e.g. 224), and a third oscillatingferromagnetic structure (e.g. 226), wherein the third ferromagnetic softlayer is disposed between the further ferromagnetic hard layer and thethird oscillating ferromagnetic structure. The second stack arrangementmay further include a fifth separating layer (e.g. 228) disposed betweenthe further ferromagnetic hard layer and the third ferromagnetic softlayer, and a sixth separating layer (e.g. 230) disposed between thethird ferromagnetic soft layer and the third oscillating ferromagneticstructure.

In the context of various embodiments, the fifth separating layer andthe sixth separating layer include non-magnetic materials.

In the context of various embodiments, the fifth separating layerincludes non-conductive materials (e.g. as insulator), e.g. magnesiumoxide (MgO). By arranging an insulator as a separating layer between thefurther ferromagnetic hard layer and the third ferromagnetic soft layer,the magnetoresistive device 120 may be configured as a tunnelmagnetoresistive (TMR) device.

However, it should be appreciated that the fifth separating layer mayinclude conductive materials (e.g. as conductor), e.g. copper (Cu). Byarranging a conductor as a separating layer between the furtherferromagnetic hard layer and the third ferromagnetic soft layer, themagnetoresistive device 120 may be configured as a giantmagnetoresistive (GMR) device.

In the context of various embodiments, the sixth separating layerincludes conductive materials (e.g. a conductor), e.g. copper (Cu).

In the context of various embodiments, the second stack arrangement maybe or may form part of a 1-bit per cell spin transfer torquemagnetoresistive random access memory (STT-MRAM).

In the context of various embodiments, the second stack arrangement maybe disposed above or below the first stack arrangement. In other words,the first stack arrangement and the second stack arrangement may bearranged one over the other. The magnetoresistive device 120 may furtherinclude a seventh separating layer (e.g. 1302) disposed between thesecond stack arrangement and the first stack arrangement. The seventhseparating layer may include non-magnetic materials. The seventhseparating layer may include conductive materials, e.g. copper (Cu).

In the context of various embodiments, the first stack arrangement andthe second stack arrangement may be or may form part of a 3-bit per cellspin transfer torque magnetoresistive random access memory (STT-MRAM).In other words, the magnetoresistive device 120 with the first stackarrangement and the second stack arrangement may provide one, two,three, four, five, six, seven or eight resistance states, which mayenable data storage of up to three bits of information, thereby allowingmulti-state or multi-bit storage.

In the context of various embodiments, the magnetoresistive device 120including the first stack arrangement may further include a furtherfirst stack arrangement (e.g. 1401, FIG. 14), e.g. a further stackarrangement similar to the first stack arrangement, wherein the furtherfirst stack arrangement is disposed above or below the first stackarrangement. In other words, the two first stack arrangements may bearranged one over the other. The magnetoresistive device 120 may furtherinclude an eighth separating layer (e.g. 1412) disposed between thefirst stack arrangement and the further first stack arrangement. Theeight separating layer may include non-magnetic materials. The eightseparating layer may include conductive materials, e.g. copper (Cu).

In the context of various embodiments, the first stack arrangement andthe further first stack arrangement may be or may form part of a 4-bitper cell spin transfer torque magnetoresistive random access memory(STT-MRAM). In other words, the magnetoresistive device 120 with thefirst stack arrangement and the further first stack arrangement mayprovide between one to sixteen resistance states, which may enable datastorage of up to four bits of information, thereby allowing multi-stateor multi-bit storage.

In the context of various embodiments, it should be appreciated that anyn-bit per cell spin transfer torque magnetoresistive random accessmemory (STT-MRAM) may be formed by providing a combination of any numberof the first stack arrangement, where each first stack arrangement mayprovide 2-bit per cell STT-MRAM, and/or any number of the second stackarrangement, where each second stack arrangement may provide 1-bit percell STT-MRAM. In the context of various embodiments, a conductive andnon-magnetic separating layer may be disposed between any two stackarrangements.

In the context of various embodiments, a combination of any number ofthe first stack arrangement, where each first stack arrangement mayprovide 2-bit per cell STT-MRAM, and/or any number of the second stackarrangement, where each second stack arrangement may provide 1-bit percell STT-MRAM, may be provided as part of a magnetic junction of amagnetoresistive device.

FIG. 1D illustrates a writing method 130 for a magnetoresistive device,according to various embodiments, where the magnetoresistive device mayhave a first oscillating ferromagnetic structure and a secondoscillating ferromagnetic structure. For the writing method 130, asignal with an operating current amplitude which is within either arange of operating current amplitudes at which oscillations are inducedfor the first oscillating ferromagnetic structure or a range ofoperating current amplitudes at which oscillations are induced for thesecond oscillating ferromagnetic structure is applied.

When the operating current amplitude of the signal is within the rangeof operating current amplitudes at which oscillations are induced forthe first oscillating ferromagnetic structure, the magnetization of thefirst oscillating ferromagnetic structure oscillates, which may causethe magnetization of the corresponding first ferromagnetic soft layer toswitch, and when the operating current amplitude of the signal is withinthe range of operating current amplitudes at which oscillations areinduced for the second oscillating ferromagnetic structure, themagnetization of the second oscillating ferromagnetic structureoscillates, which may cause the magnetization of the correspondingsecond ferromagnetic soft layer to switch. In various embodiments, therange of operating current amplitudes at which oscillations are inducedfor the first oscillating ferromagnetic structure may be non-overlappingor substantially non-overlapping with the range of operating currentamplitudes at which oscillations are induced for the second oscillatingferromagnetic structure, e.g. the ranges of the operating currentamplitudes at which oscillations are induced for the first oscillatingferromagnetic structure and the second oscillating ferromagneticstructure may be different.

In the context of various embodiments, the writing method 110 and/or thewriting method 130 may be applied to the magnetoresistive device 100and/or the magnetoresistive device 120 of various embodiments.

Features or components of the magnetoresistive device 120 that aresimilarly present in the magnetoresistive device 100 may be as describedin the context of the magnetoresistive device 100, and vice versa.

In the context of various embodiments, the magnetoresistive device 100and/or the magnetoresistive device 120 may be or may form part of a spintransfer torque magnetoresistive random access memory (STT-MRAM) withperpendicular anisotropy (p-STT-MRAM).

The magnetization orientations or directions of the respective magneticlayers, e.g. the ferromagnetic soft layers and the ferromagnetic hardlayers, are configured to orient in a direction at least substantiallyperpendicular to a plane defined by an interface between the magneticlayers. In other words, the ferromagnetic soft layers and theferromagnetic hard layers have their magnetic easy axis (e.g.magnetization orientation or direction) aligned in a perpendiculardirection (i.e. perpendicular anisotropy), for example in a direction atleast substantially perpendicular to a plane defined by an interfacebetween the magnetic layers.

In the context of various embodiments, the term “easy axis” as appliedto magnetism may mean an energetically favorable direction ofspontaneous magnetization as a result of magnetic anisotropy. Themagnetization orientation may be either of two opposite directions alongthe easy axis.

In the context of various embodiments, a ferromagnetic hard layer maymean a magnetic layer having a fixed magnetization orientation ordirection. The ferromagnetic hard layer may include a hard ferromagneticmaterial, which may be resistant to magnetization and demagnetization(i.e. not easily magnetized and demagnetized), and may have a highhysteresis loss and a high coercivity. In the context of variousembodiments, a ferromagnetic hard layer may also be referred to as afixed magnetic layer. In the context of various embodiments, theferromagnetic hard layer may act as a reference layer.

In the context of various embodiments, a ferromagnetic hard layer mayinclude at least one of iron (Fe), cobalt (Co) or nickel (Ni). Invarious embodiments, the ferromagnetic hard layer may includecobalt-iron-boron (CoFeB), a (Co/Ni) bilayer structure, or a bilayerstructure including a first layer of material selected from the groupconsisting of cobalt (Co), cobalt-iron (CoFe) and cobalt-iron-boron(CoFeB), and a second layer of material selected from the groupconsisting of palladium (Pd), platinum (Pt), iron-platinum (FePt) alloy,cobalt-platinum (CoPt) alloy, cobalt-iron (CoFe) and any combinationthereof. For example, the ferromagnetic hard layer may include a bilayeror a multilayer of (Co/X), (CoFe/X) or (CoFeB/X) where X is palladium(Pd), platinum (Pt), FePt alloy, CoPt alloy, CoFe or any combination ofthese materials. Any combination of cobalt-iron-boron (CoFeB), (Co/Ni)multilayer, (Co/X) multilayer, (CoFe/X) multilayer and (CoFeB/X)multilayer may also be provided. As a non-limiting example, theferromagnetic hard layer may include (CoFe/Pd)₅ of 5 layers of CoFearranged alternately with 5 layers of Pd, i.e.(CoFe/Pd/CoFe/Pd/CoFe/Pd/CoFe/Pd/CoFe/Pd). In embodiments with amultilayer structure, the number of repeats of bilayer structures may bemore than or equal to 2, e.g. 3, 4, 5 or any higher number.

In the context of various embodiments, a ferromagnetic hard layer mayhave a thickness in a range of between about 3 nm and about 50 nm, e.g.between about 3 nm and about 20 nm, between about 3 nm and about 10 nm,between about 10 nm and about 50 nm, between about 30 nm and about 50 nmor between about 5 nm and about 20 nm.

In the context of various embodiments, a ferromagnetic soft layer maymean a magnetic layer having a varying or variable magnetizationorientation or direction. In other words, the magnetization orientationmay be changed or varied, for example by applying a current, such as aspin-polarized current. The ferromagnetic soft layer may include a softferromagnetic material, which may be receptive to magnetization anddemagnetization (i.e. easily magnetized and demagnetized), and may havea small hysteresis loss and a low coercivity. In the context of variousembodiments, a ferromagnetic soft layer may also be referred to as afree magnetic layer. In the context of various embodiments, theferromagnetic soft layer may act as a storage layer.

In the context of various embodiments, a ferromagnetic soft layer mayinclude at least one of iron (Fe), cobalt (Co) or nickel (Ni). Invarious embodiments, the ferromagnetic soft layer may includecobalt-iron-boron (CoFeB), a (Co/Ni) bilayer structure, or a bilayerstructure including a first layer of material selected from the groupconsisting of cobalt (Co), cobalt-iron (CoFe) and cobalt-iron-boron(CoFeB), and a second layer of material selected from the groupconsisting of palladium (Pd), platinum (Pt), iron-platinum (FePt) alloy,cobalt-platinum (CoPt) alloy, cobalt-iron (CoFe) and any combinationthereof. For example, the ferromagnetic soft layer may include a bilayeror a multilayer of (Co/X), (CoFe/X) or (CoFeB/X) where X is palladium(Pd), platinum (Pt), FePt alloy, CoPt alloy, CoFe or any combination ofthese materials. Any combination of cobalt-iron-boron (CoFeB), (Co/Ni)multilayer, (Co/X) multilayer, (CoFe/X) multilayer and (CoFeB/X)multilayer may also be provided. As a non-limiting example, theferromagnetic soft layer may include (CoFe/Pd)₅, of 5 layers of CoFearranged alternately with 5 layers of Pd, i.e.(CoFe/Pd/CoFe/Pd/CoFe/Pd/CoFe/Pd/CoFe/Pd). In embodiments with amultilayer structure, the number of repeats of bilayer structures may bemore than or equal to 2, e.g. 3, 4, 5 or any higher number.

In the context of various embodiments, a ferromagnetic soft layer mayhave a thickness in a range of between about 0.3 nm and about 4 nm, forexample between about 0.3 nm and about 2 nm, between about 0.3 nm andabout 1 nm or between about 1 nm and about 4 nm.

In the context of various embodiments, the magnetization orientation ofa ferromagnetic soft layer may be in one of two directions. Theferromagnetic soft layer may be in a parallel state (P) or ananti-parallel state (AP) with respect to a ferromagnetic hard layer. Inthe parallel state, the magnetization orientation of the ferromagneticsoft layer is parallel to the magnetization orientation of theferromagnetic hard layer, such that the two magnetization orientationsare in the same direction. In the anti-parallel state, the magnetizationorientation of the ferromagnetic soft layer is anti-parallel to themagnetization orientation of the ferromagnetic hard layer, such that thetwo magnetization orientations are in opposite directions.

In the context of various embodiments, an oscillating ferromagneticstructure or layer may mean a magnetic layer with a magnetizationorientation or direction which is configured to oscillate or precess ina direction in response to a current or a voltage applied across themagnetoresistive device. The oscillating ferromagnetic structure maychange the magnetization orientation of the corresponding ferromagneticsoft layer as a result of the oscillation or precession, for example dueto spin transfer torque. The oscillation may be in a circular directionor resembling a cone direction, and for example may be a clockwisedirection or an anti-clockwise direction.

In the context of various embodiments, a separating layer may be of aconductive and non-magnetic material, or a non-conductive andnon-magnetic material. In various embodiments, a separating layer havingor of a conductive and non-magnetic material (e.g. an electricalconductor) may include but not limited to any one of or any combinationof copper (Cu), silver (Ag), gold (Au), tantalum (Ta), chromium (Cr),palladium (Pd), platinum (Pt), iridium (Ir), rhodium (Rh) or ruthenium(Ru). In various embodiments, a separating layer having or of anon-conductive and non-magnetic material (e.g. an insulator) may includebut not limited to any one of or any combination of magnesium oxide(MgO), alumina (AlO_(x)) or titanium oxide (TiO_(x)). In the context ofvarious embodiments, a separation layer may also be referred to as aspacer layer.

In the context of various embodiments, where a separating layer is of aconductive and non-magnetic material, the separating layer may have athickness of between about 1 nm and about 20 nm, e.g. between about 1 nmand about 10 nm, between about 1 nm and about 5 nm, between about 5 nmand about 20 nm, between about 5 nm and about 10 nm, or between about1.5 nm and about 5 nm.

In the context of various embodiments, where a separating layer is of anon-conductive and non-magnetic material, the separating layer may havea thickness ranging from about 0.3 nm to about 2.0 nm, e.g. about 0.3 nmto about 1.5 nm, about 0.3 nm to about 0.8 nm, about 0.8 nm to about 2.0nm, about 0.8 nm to about 1.5 nm or about 0.6 nm to about 1.2 nm.

In the context of various embodiments, the terms “first” and “second”with respect to a feature (e.g. ferromagnetic soft layer) refer toseparate but similar features. The terms may be interchangeable, forexample depending on the arrangement of the magnetoresistive device. Forexample, where two ferromagnetic soft layers are arranged one above theother, the bottom ferromagnetic soft layer may be termed as “firstferromagnetic soft layer” while the top ferromagnetic soft layer may betermed as “second ferromagnetic soft layer”, or vice versa.

In the context of various embodiments, the term “magnetization switchingfrequencies” with respect to a ferromagnetic soft layer may mean a rangeof frequencies at which the ferromagnetic soft layer may switch itsmagnetization orientation.

In the context of various embodiments, the term “optimum magnetizationswitching frequency” with respect to a ferromagnetic soft layer may meana particular frequency at which the ferromagnetic soft layer may switchits magnetization orientation, close to or equal to a resonancefrequency of the ferromagnetic soft layer.

In the context of various embodiments, the term “resonance frequency”with respect to a ferromagnetic soft layer may refer to the frequency ofthe ferromagnetic soft layer at which the ferromagnetic soft layer mayswitch with the smallest critical current for a given pulse length andamplitude, or equivalently may switch in the fastest time for a givencurrent pulse time width and amplitude. The term “resonance frequency”with respect to a ferromagnetic soft layer may also refer to theoscillating frequency of the oscillating ferromagnetic structure atwhich the corresponding ferromagnetic soft layer may switch with thesmallest critical current for a given pulse length and amplitude, orequivalently may switch in the fastest time for a given current pulsetime width and amplitude.

In the context of various embodiments, the term “perpendicular magneticanisotropy field” may mean a magnetic field in the perpendiculardirection of a ferromagnetic layer, e.g. perpendicular to a surface ofthe ferromagnetic layer, which may interface with another ferromagneticlayer.

In the context of various embodiments, the term “saturationmagnetization” may mean the maximum induced magnetic moment that may beobtained for a material in a magnetic field, which beyond this field nofurther increase in magnetization occurs.

In the context of various embodiments, the term “disposed” may beinterchangeably used with the terms “arranged” and/or “formed”.

FIG. 2A shows a schematic cross-sectional view of a magnetoresistivedevice 200, according to various embodiments, illustrating anon-limiting example of a

2-bit spin transfer torque magnetoresistive random access memory(STT-MRAM), for implementation using the Frequency Selection SwitchingScheme (FSSS) or the Oscillator Selection Switching Scheme (OSSS).

The magnetoresistive device 200 may be a giant magnetoresistive (GMR)device or a tunneling magnetoresistive (TMR) device, e.g. a spintransfer torque magnetic random access memory (STT-MRAM) withperpendicular anisotropy. The magnetoresistive device 200 has a stackstructure, having for example a plurality of ferromagnetic layers.

The magnetoresistive device 200 includes a ferromagnetic hard layer 202as a reference layer, two (2) ferromagnetic soft layers, e.g. a firstferromagnetic soft layer 204 a and a second ferromagnetic soft layer 204b, and two (2) oscillating ferromagnetic structures, e.g. a firstoscillating ferromagnetic structure 206 a and a second oscillatingferromagnetic structure 206 b, arranged one over the other. Theferromagnetic hard layer 202 may have a fixed magnetization orientation,the ferromagnetic soft layers 204 a, 204 b may have a variablemagnetization orientation, i.e. the magnetization orientation ischangeable or switchable between different orientations or states, whilethe oscillating ferromagnetic structures, 206 a, 206 b may have amagnetization orientation which may oscillate or precess in a directionin response to a current or a voltage applied across themagnetoresistive device 200.

The ferromagnetic hard layer 202, the first ferromagnetic soft layer 204a, the second ferromagnetic soft layer 204 b, the first oscillatingferromagnetic structure 206 a and the second oscillating ferromagneticstructure 206 b have their magnetic easy axis (e.g. magnetizationorientation or direction) aligned in a perpendicular direction (i.e.perpendicular anisotropy), for example in a direction at leastsubstantially perpendicular to a plane defined by an interface, forexample an interface between the first ferromagnetic soft layer 204 aand the first oscillating ferromagnetic structure 206 a or between theferromagnetic hard layer 202 and the first ferromagnetic soft layer 204a.

As shown in FIG. 2A, the arrow shown within the ferromagnetic hard layer202 illustrates the direction of magnetization orientation of theferromagnetic hard layer 202. While the arrow is shown pointing in adownward direction, it should be appreciated that the arrow may beillustrated as pointing in an upward direction, such that amagnetization orientation in the opposite direction to that of theembodiment of FIG. 2A may be provided for the ferromagnetic hard layer202.

The magnetization orientation or direction of each of the firstferromagnetic soft layer 204 a and the second ferromagnetic soft layer204 b may be oriented parallel to and in the same direction (parallelstate) as the magnetization orientation of the ferromagnetic hard layer202, or oriented parallel to and in the opposite direction(anti-parallel state) as the magnetization orientation of theferromagnetic hard layer 202. The respective arrows shown within thefirst ferromagnetic soft layer 204 a and the second ferromagnetic softlayer 204 b illustrate the two directions (upwards and downwards) of themagnetization orientation, such that the magnetization orientation ofeach of the first ferromagnetic soft layer 204 a and the secondferromagnetic soft layer 204 b may be in either of these two directions.

Furthermore, in various embodiments, the magnetization orientations ordirections of the first oscillating ferromagnetic structure 206 a andthe second oscillating ferromagnetic structure 206 b are oriented in anopposite direction with respect to the magnetization orientation of theferromagnetic hard layer 202. For illustration purposes, each of themagnetization orientations or directions of the first oscillatingferromagnetic structure 206 a, the second oscillating ferromagneticstructure 206 b and the ferromagnetic hard layer 202, as represented bythe respective arrows within the respective layers in FIG. 2A, may pointin an upward direction or a downward direction.

The magnetization orientations of the first oscillating ferromagneticstructure 206 a and the second oscillating ferromagnetic structure 206 bmay oscillate or precess in a direction, such as a cone direction or adirection resembling a cone, in response to a current or a voltageapplied across the magnetoresistive device 200 so as to change themagnetization orientation of the corresponding first ferromagnetic softlayer 204 a and second ferromagnetic soft layer 204 b respectively, forexample due to spin transfer torque. For illustration purposes, themagnetization orientations of the first oscillating ferromagneticstructure 206 a and the second oscillating ferromagnetic structure 206 bare shown as oscillating in a cone direction, which may occur duringoperation, or in-motion or oscillating mode (e.g. when a current or avoltage is applied across the magnetoresistive device 200). Asillustrated in FIG. 2A, the cone direction may be a direction asrepresented by the arrow 207 a (e.g. clockwise direction) or the arrow207 b (e.g. anti-clockwise direction).

In various embodiments, the magnetization orientations of the firstoscillating ferromagnetic structure 206 a and the second oscillatingferromagnetic structure 206 b may oscillate or precess in the same oropposite directions. In various embodiments, the magnetizationorientations of the first oscillating ferromagnetic structure 206 a andthe second oscillating ferromagnetic structure 206 b may oscillate orprecess at the same or different amplitudes.

In various embodiments, the first ferromagnetic soft layer 204 a isarranged between the ferromagnetic hard layer 202 and the firstoscillating ferromagnetic structure 206 a, while the secondferromagnetic soft layer 204 b is arranged between the ferromagnetichard layer 202 and the second oscillating ferromagnetic structure 206 b.

The magnetoresistive device 200 has a stack arrangement having differentferromagnetic layers in the order of the first oscillating ferromagneticstructure 206 a, the first ferromagnetic soft layer 204 a, theferromagnetic hard layer 202, the second ferromagnetic soft layer 204 band the second oscillating ferromagnetic structure 206 b. It should beappreciated that the positions of the first ferromagnetic soft layer 204a and the second ferromagnetic soft layer 204 b may be interchangeable,and/or the positions of the first oscillating ferromagnetic structure206 a and the second oscillating ferromagnetic structure 206 b may beinterchangeable. The first oscillating ferromagnetic structure 206 a,the first ferromagnetic soft layer 204 a, the ferromagnetic hard layer202, the second ferromagnetic soft layer 204 b and the secondoscillating ferromagnetic structure 206 b may form part of a magneticjunction of the magnetoresistive device 200.

As shown in FIG. 2A, each of the first oscillating ferromagneticstructure 206 a, the first ferromagnetic soft layer 204 a, theferromagnetic hard layer 202, the second ferromagnetic soft layer 204 band the second oscillating ferromagnetic structure 206 b are separatedfrom each other by a separating layer, for example a spacer layer.

The magnetoresistive device 200 includes a separating layer 208 aarranged in between the ferromagnetic hard layer 202 and the firstferromagnetic soft layer 204 a. The magnetoresistive device 200 furtherincludes a separating layer 208 b arranged in between the ferromagnetichard layer 202 and the second ferromagnetic soft layer 204 b.

Each of the separating layers 208 a, 208 b may be of a non-conductiveand non-magnetic material (e.g. an insulator). For example, each of theseparating layers 208 a, 208 b may include but not limited to one ormore of magnesium oxide (MgO), aluminium oxide (AlO_(x)), or titaniumoxide (TiO_(x)).

The magnetoresistive device 200 includes a separating layer 210 aarranged in between the first oscillating ferromagnetic structure 206 aand the first ferromagnetic soft layer 204 a. The magnetoresistivedevice 200 further includes a separating layer 210 b arranged in betweenthe second ferromagnetic soft layer 204 b and the second oscillatingferromagnetic structure 206 b.

Each of the separating layers 210 a, 210 b may be of a conductive andnon-magnetic material (e.g. a conductor). For example, each of theseparating layers 210 a, 210 b may include but not limited to one ormore of copper (Cu), silver (Ag), gold (Au), tantalum (Ta), chromium(Cr), palladium (Pd), platinum (Pt), iridium (Ir), rhodium (Rh) orruthenium (Ru). The magnetoresistive device 200 may therefore beconfigured as a tunneling magnetoresistive (TMR) device.

However, it should be appreciated that the magnetoresistive device 200may be configured as a giant magnetoresistive (GMR) device, with boththe separating layers 208 a, 208 b of a conductive and non-magneticmaterial (e.g. a conductor), e.g. one or more of Cu, Ag, Au, Ta, Cr, Pd,Pt, Ir, Rh or Ru.

In addition, it should be appreciated that any one of or both separatinglayers 210 a, 210 b may be of a non-conductive and non-magnetic material(e.g. an insulator) including but not limited to one or more ofmagnesium oxide (MgO), aluminium oxide (AlO_(x)), or titanium oxide(TiO_(x)). The thickness of the insulating layer may be between about0.3 nm and about 2.0 nm, e.g. between about 0.3 nm and about 1.5 nm,between about 0.3 nm and about 0.8 nm, between about 0.8 nm and about2.0 nm, between about 0.8 nm and about 1.5 nm or between about 0.6 nmand about 1.2 nm.

While FIG. 2A illustrates a common ferromagnetic hard layer 202 sharedby the first ferromagnetic soft layer 204 a and the second ferromagneticsoft layer 204 b, it should be appreciated that a respectivecorresponding ferromagnetic hard layer may be provided for each of thefirst ferromagnetic soft layer 204 a and the second ferromagnetic softlayer 204 b.

It should be appreciated that the magnetoresistive device 200 may haveany stack structure or arrangement with any number of ferromagneticlayers or structures, and/or arranged in any configurations, as long asa ferromagnetic soft layer has a corresponding oscillating ferromagneticstructure arranged on one side of the ferromagnetic soft layer and aferromagnetic hard layer arranged on the other side of the ferromagneticsoft layer, opposite to the oscillating ferromagnetic structure.

FIG. 2B shows a schematic cross-sectional view of a magnetoresistivedevice 220, according to various embodiments, illustrating anon-limiting example of a 1-bit spin transfer torque magnetoresistiverandom access memory (STT-MRAM), for implementation using the FrequencySelection Switching Scheme (FSSS) or the Oscillator Selection SwitchingScheme (OSSS).

The magnetoresistive device 220 may be a giant magnetoresistive (GMR)device or a tunneling magnetoresistive (TMR) device, e.g. a spintransfer torque magnetic random access memory (STT-MRAM) withperpendicular anisotropy. The magnetoresistive device 220 has a stackstructure, having for example a plurality of ferromagnetic layers.

The magnetoresistive device 220 includes a ferromagnetic hard layer 222as a reference layer, a ferromagnetic soft layer 224, and an oscillatingferromagnetic structure 226, arranged one over the other. In variousembodiments, the ferromagnetic soft layer 224 is arranged between theferromagnetic hard layer 222 and the oscillating ferromagnetic structure226.

The ferromagnetic hard layer 222 may have a fixed magnetizationorientation, the ferromagnetic soft layer 224 a may have a variablemagnetization orientation, i.e. the magnetization orientation ischangeable or switchable between different orientations or states, whilethe oscillating ferromagnetic structure 226 may have a magnetizationorientation which may oscillate or precess in a direction in response toa current or a voltage applied across the magnetoresistive device 220.

The ferromagnetic hard layer 222, the ferromagnetic soft layer 224 andthe oscillating ferromagnetic structure 226 have their magnetic easyaxis (e.g. magnetization orientation or direction) aligned in aperpendicular direction (i.e. perpendicular anisotropy), for example ina direction at least substantially perpendicular to a plane defined byan interface, for example an interface between the ferromagnetic hardlayer 222 and the ferromagnetic soft layer 224 or between theoscillating ferromagnetic structure 226 and the ferromagnetic soft layer224.

As shown in FIG. 2B, the arrow shown within the ferromagnetic hard layer222 illustrates the direction of magnetization orientation of theferromagnetic hard layer 222. While the arrow is shown pointing in adownward direction, it should be appreciated that the arrow may beillustrated as pointing in an upward direction, such that amagnetization orientation in the opposite direction to that of theembodiment of FIG. 2B may be provided for the ferromagnetic hard layer222.

The magnetization orientation or direction of the ferromagnetic softlayer 224 may be oriented parallel to and in the same direction(parallel state) as the magnetization orientation of the ferromagnetichard layer 222, or oriented parallel to and in the opposite direction(anti-parallel state) as the magnetization orientation of theferromagnetic hard layer 222. The respective arrows shown within theferromagnetic soft layer 224 illustrate the two directions (upwards anddownwards) of the magnetization orientation, such that the magnetizationorientation of the ferromagnetic soft layer 224 may be in either ofthese two directions.

Furthermore, in various embodiments, the magnetization orientation ofthe oscillating ferromagnetic structure 226 is oriented in an oppositedirection with respect to the magnetization orientation of theferromagnetic hard layer 222. For illustration purposes, themagnetization orientations of the oscillating ferromagnetic structure226 and the ferromagnetic hard layer 222, as represented by therespective arrows within the respective layers in FIG. 2B, may point inan upward direction or a downward direction.

The magnetization orientations of the oscillating ferromagneticstructure 226 may oscillate or precess in a direction, such as a conedirection or a direction resembling a cone, in response to a current ora voltage applied across the magnetoresistive device 220 so as to changethe magnetization orientation of the ferromagnetic soft layer 224, forexample due to spin transfer torque. For illustration purposes, themagnetization orientation of the oscillating ferromagnetic structure 226is shown as oscillating in a cone direction, which may occur duringoperation, or in-motion or oscillating mode (e.g. when a current or avoltage is applied across the magnetoresistive device 220). Asillustrated in FIG. 2B, the cone direction may be a direction asrepresented by the arrow 227 a (e.g. clockwise direction) or the arrow227 b (e.g. anti-clockwise direction).

The magnetoresistive device 220 has a stack arrangement having differentferromagnetic layers in the order of the oscillating ferromagneticstructure 226, the ferromagnetic soft layer 224 and the ferromagnetichard layer 222. It should be appreciated that the positions of theoscillating ferromagnetic structure 226 and the ferromagnetic hard layer222 may be interchangeable. The oscillating ferromagnetic structure 226,the ferromagnetic soft layer 224 and the ferromagnetic hard layer 222may form part of a magnetic junction of the magnetoresistive device 220.

As shown in FIG. 2B, each of the oscillating ferromagnetic structure226, the ferromagnetic soft layer 224 and the ferromagnetic hard layer222 are separated from each other by a separating layer, for example aspacer layer.

The magnetoresistive device 220 includes a separating layer 228 arrangedin between the ferromagnetic hard layer 222 and the ferromagnetic softlayer 224. The separating layer 228 may be of a non-conductive andnon-magnetic material (e.g. an insulator). For example, the separatinglayer 228 may include but not limited to one or more of magnesium oxide(MgO), aluminium oxide (AlO_(x)), or titanium oxide (TiO_(x)).

The magnetoresistive device 220 further includes a separating layer 230arranged in between the oscillating ferromagnetic structure 226 and theferromagnetic soft layer 224. The separating layer 230 may be of aconductive and non-magnetic material (e.g. a conductor). For example,the separating layer 230 may include but not limited to one or more ofcopper (Cu), silver (Ag), gold (Au), tantalum (Ta), chromium (Cr),palladium (Pd), platinum (Pt), iridium (Ir), rhodium (Rh) or ruthenium(Ru). The magnetoresistive device 220 may therefore be configured as atunneling magnetoresistive (TMR) device.

However, it should be appreciated that the magnetoresistive device 220may be configured as a giant magnetoresistive (GMR) device, with theseparating layer 228 of a conductive and non-magnetic material (e.g. aconductor), e.g. one or more of Cu, Ag, Au, Ta, Cr, Pd, Pt, Ir, Rh orRu.

It should be appreciated that any number of the stack arrangementsillustrated in FIG. 2A and/or FIG. 2B may be arranged to provide amulti-bit per cell spin transfer torque magnetoresistive random accessmemory (STT-MRAM).

In the context of various embodiments of the magnetoresistive devices200, 220, one or more of the first oscillating ferromagnetic structure206 a, the second oscillating ferromagnetic structure 206 b and theoscillating ferromagnetic structure 226 may include one or moreferromagnetic materials, and/or one or more ferromagnetic layers. Eachferromagnetic layer may include at least one of iron (Fe), cobalt (Co)or nickel (Ni). In various embodiments, one or more of the ferromagneticlayers may include cobalt-iron-boron (CoFeB), a bilayer structure ofcobalt-nickel (Co/Ni), or a bilayer structure including a first layer ofmaterial selected from the group consisting of cobalt (Co), cobalt-iron(CoFe) and cobalt-iron-boron (CoFeB), and a second layer of materialselected from the group consisting of palladium (Pd), platinum (Pt),iron-platinum (FePt) alloy, cobalt-platinum (CoPt) alloy, cobalt-iron(CoFe) and any combination thereof. For example, the ferromagnetic layermay include a bilayer or a multilayer of (Co/Ni), (Co/X), (CoFe/X) or(CoFeB/X). Any combination of cobalt-iron-boron (CoFeB), (Co/Ni), (Co/X)multilayer, (CoFe/X) multilayer and (CoFeB/X) multilayer may also beprovided. As a non-limiting example, the ferromagnetic layer may include(CoFe/Pd)₅, of 5 layers of CoFe arranged alternately with 5 layers ofPd, i.e. (CoFe/Pd/CoFe/Pd/CoFe/Pd/CoFe/Pd/CoFe/Pd)

In various embodiments, the thickness of each ferromagnetic layer in thefirst oscillating ferromagnetic structure 206 a, the second oscillatingferromagnetic structure 206 b and the oscillating ferromagneticstructure 226 may be in a range of between about 0.2 nm and about 4 nm,for example between about 0.2 nm and about 2 nm, between about 0.2 nmand about 1 nm, between about 1 nm and about 4 nm, between about 2 nmand about 4 nm, or between about 1 nm and about 3 nm.

In various embodiments, where any of the first oscillating ferromagneticstructure 206 a, the second oscillating ferromagnetic structure 206 band the oscillating ferromagnetic structure 226 has a multilayerstructure, the multilayer structure may include any number of a bilayerstructure, e.g. (CoFe/Pd), of 2 (e.g. (CoFe/Pd)₂) or more (e.g. 3, 4, 5,6 or any higher number) bilayer structure. In other words, the bilayerstructure, e.g. (CoFe/Pd), may be repeated twice or any higher number.

In the context of various embodiments of the magnetoresistive devices200, 220, where any of the first oscillating ferromagnetic structure 206a, the second oscillating ferromagnetic structure 206 b and theoscillating ferromagnetic structure 226 includes more than oneferromagnetic layer, e.g. 2, 3, 4, 5 or any higher number, one or morenon-magnetic layer may be deposited or arranged between any two adjacentferromagnetic layers. The non-magnetic layer may be ruthenium (Ru),rhodium (Rh), iridum (Ir), copper (Cu), silver (Ag), or chromium (Cr),with a thickness of between about 0.2 nm and about 3 nm, for examplebetween about 0.2 nm and about 2 nm, between about 0.2 nm and about 1nm, between about 1 nm and about 3 nm, or between about 0.5 nm and about2 nm.

In embodiments where there are two or more oscillating ferromagneticstructures, the oscillating ferromagnetic structures may be of the sameor different configurations and/or materials and/or number of layersand/or materials per layer and/or number of repeating bilayerstructures. In various embodiments, where each of the two or moreoscillating ferromagnetic structures includes a single ferromagneticlayer, the oscillating ferromagnetic structures may be of differentmaterials.

In the context of various embodiments of the magnetoresistive devices200, 220, the first oscillating ferromagnetic structure 206 a, thesecond oscillating ferromagnetic structure 206 b and the oscillatingferromagnetic structure 226 may assist the switching of themagnetization of the corresponding ferromagnetic soft layers 204 a, 204b, 224, by Frequency Induced Spin Torque Switching (FISTS), which willbe described later.

For embodiments of the Frequency Selection Switching Scheme (FSSS), theproperties of the first ferromagnetic soft layer 204 a, the secondferromagnetic soft layer 204 b and the ferromagnetic soft layer 224, andits respective corresponding first oscillating ferromagnetic structure206 a, second oscillating ferromagnetic structure 206 b and oscillatingferromagnetic structure 226 may be determined or chosen such thatswitching of each of the first ferromagnetic soft layer 204 a, thesecond ferromagnetic soft layer 204 b and the ferromagnetic soft layer224 may be carried out only in a range of frequencies close to aresonance frequency of the respective ferromagnetic soft layer. This mayallow each of the first ferromagnetic soft layer 204 a, the secondferromagnetic soft layer 204 b and the ferromagnetic soft layer 224 toswitch at different frequencies independently, e.g. each ferromagneticsoft layer may be switched independently within a particular range ofmagnetization switching frequencies.

FIG. 2C shows a schematic diagram 240 illustrating the concept offrequency bandwidth 242 for various embodiments. The frequency bandwidth242 may be defined as the range of frequencies where switching (e.g. arange of magnetization switching frequencies), for example of aferromagnetic soft layer, occurs for a particular applied currentdensity and pulse width (e.g. 2 ns).

For embodiments of the Oscillator Selection Switching Scheme (OSSS), theproperties of the respective first oscillating ferromagnetic structure206 a, second oscillating ferromagnetic structure 206 b and oscillatingferromagnetic structure 226 corresponding to each of the firstferromagnetic soft layer 204 a, the second ferromagnetic soft layer 204b and the ferromagnetic soft layer 224 may be determined or chosen suchthat the first oscillating ferromagnetic structure 206 a, the secondoscillating ferromagnetic structure 206 b and the oscillatingferromagnetic structure 226 have different critical current densities(or ranges of operating current amplitudes) at which oscillations areinduced, so that FISTS is in effect for only one ferromagnetic softlayer for a particular applied current density. This may allow each ofthe first ferromagnetic soft layer 204 a, the second ferromagnetic softlayer 204 b and the ferromagnetic soft layer 224 to switch independentlyat different current densities, e.g. each ferromagnetic soft layer maybe switched independently at a particular current density or aparticular range of operating current amplitudes.

Non-limiting examples of an oscillating ferromagnetic structure are nowdescribed with reference to FIGS. 3A to 3D.

FIG. 3A shows a schematic cross-sectional view of an oscillatingferromagnetic structure 300, according to various embodiments, duringoperation, or in-motion or oscillating mode (e.g. when a current or avoltage is applied across the oscillating ferromagnetic structure 300).The oscillating ferromagnetic structure 300 includes a ferromagneticlayer 302 with a perpendicular anisotropy component, a ferromagneticlayer 304 with an in-plane anisotropy component (i.e. in an initialstate or rest state, the magnetization orientation of the ferromagneticlayer 304 points in a left or right direction) and a ferromagnetic hardlayer 306 with a perpendicular anisotropy component, the ferromagneticlayer 302, the ferromagnetic layer 304 and the ferromagnetic hard layer306 arranged one over the other. In other words, the ferromagnetic layer302 and the ferromagnetic hard layer 306 have respective magnetizationorientations configured to orient in a direction at least substantiallyperpendicular to a plane defined by an interface, for example aninterface between the ferromagnetic layer 302 and the ferromagneticlayer 304 or between the ferromagnetic layer 302 and the ferromagnetichard layer 306. The ferromagnetic layer 304 has a magnetizationorientation configured to orient in a direction at least substantiallyparallel to a plane defined by an interface, for example an interfacebetween the ferromagnetic layer 302 and the ferromagnetic layer 304 orbetween the ferromagnetic layer 302 and the ferromagnetic hard layer306. As a non-limiting example, FIG. 3A illustrates that theferromagnetic layer 302 is arranged or stacked on top of theferromagnetic layer 304, which in turn in arranged or stacked on top ofthe ferromagnetic hard layer 306.

As shown in FIG. 3A, during operation or during in-motion or oscillatingmode, the respective magnetization orientations of the ferromagneticlayer 302 and the ferromagnetic layer 304 may oscillate or precess in adirection, such as a cone direction or a direction resembling a cone, inresponse to a current or a voltage applied across the oscillatingferromagnetic structure 300 so as to change the magnetizationorientation of a corresponding ferromagnetic soft layer, for example dueto spin transfer torque. As a non-limiting example, with reference toFIGS. 2A and 3A, the structure of the first oscillating ferromagneticstructure 206 a may be that of the oscillating ferromagnetic structure300. Where the first oscillating ferromagnetic structure 206 a isconfigured such that the magnetization orientation of the firstoscillating ferromagnetic structure 206 a oscillates in a direction,e.g. the cone direction as represented by the arrow 207 a (e.g.clockwise direction), the magnetization orientation of the ferromagneticlayer 302 oscillates in a similar clockwise direction, as represented bythe arrow 303 a, while the magnetization orientation of theferromagnetic layer 304 may oscillate in a clockwise direction oranti-clockwise direction, as represented respectively by the arrows 305a and 305 b. Where the first oscillating ferromagnetic structure 206 ais configured such that the magnetization orientation of the firstoscillating ferromagnetic structure 206 a oscillates in a direction,e.g. the cone direction as represented by the arrow 207 b (e.g.anti-clockwise direction), the magnetization orientation of theferromagnetic layer 302 oscillate in a similar anti-clockwise direction,as represented by the arrow 303 b, while the magnetization orientationof the ferromagnetic layer 304 may oscillate in a clockwise direction oranti-clockwise direction, as represented respectively by the arrows 305a and 305 b. While the ferromagnetic layer 304 has an in-planeanisotropy component in the initial state or rest state, themagnetization orientation of the ferromagnetic layer 304 may beconfigured to oscillate or precess in the direction 305 a or 305 b(similar to directions 303 a or 303 b for the ferromagnetic layer 302having a perpendicular anisotropy component) due to the effect of theferromagnetic hard layer 306. The electrons acquire polarization in thepolarization direction of the ferromagnetic hard layer 306, and the spintorque from these electrons act on the ferromagnetic layer 304. Due tothe in-plane anisotropy of the ferromagnetic layer 304, theferromagnetic layer 304 may respond to the spin torque in such a waythat it may oscillate or precess in a cone direction (e.g. 305 a or 305b) whose axis is perpendicular to the plane by an interface, for examplean interface between the ferromagnetic layer 302 and the ferromagneticlayer 304 or between the ferromagnetic layer 302 and the ferromagnetichard layer 306, similar to that for the ferromagnetic layer 302.

In various embodiments, the ferromagnetic layer 302 and theferromagnetic layer 304 may be ‘softer’ (i.e. ferromagnetically softer)than the ferromagnetic hard layer 306. In various embodiments, theferromagnetic layer 302 and the ferromagnetic layer 304 may or may notbe ‘softer’ (i.e. ferromagnetically softer) than the ferromagnetic softlayers (e.g. 204 a, 204 b, 224).

The oscillating ferromagnetic structure 300 further includes aseparating layer 308 arranged in between the ferromagnetic layer 302 andthe ferromagnetic layer 304. The oscillating ferromagnetic structure 300further includes a separating layer 310 arranged in between theferromagnetic layer 304 and the ferromagnetic hard layer 306.

In various embodiments, each of the separating layers 308, 310 may be ofa conductive and non-magnetic material (e.g. Cu, Ag or Au). In variousembodiments, each of the separating layers 308, 310 may have a thicknessof at least 1.5 nm, for example a thickness of between about 1.5 nm and20 nm, e.g. between about 1.5 nm and 10 nm, between about 1.5 nm and 5nm, between about 5 nm and 20 nm or between about 5 nm and 10 nm.

In various embodiments, each of the ferromagnetic layer 302 and theferromagnetic layer 304 may include a material, including but notlimited to cobalt (Co), cobalt-iron (CoFe), cobalt-iron-boron (CoFeB) orany combinations thereof.

In various embodiments, each of the ferromagnetic layer 302 and theferromagnetic layer 304 may have a thickness in a range of between about0.5 nm and about 4 nm, for example between about 0.5 nm and about 2 nm,between about 0.5 nm and about 1 nm or between about 1 nm and about 4nm.

In various embodiments, the ferromagnetic hard layer 306 may include amaterial having at least one of iron (Fe), cobalt (Co) and nickel (Ni)elements, for example cobalt-iron-boron (CoFeB), (Co/Ni) multilayer,(Co/X) multilayer, (CoFe/X) multilayer, (CoFeB/X) multilayer where X ispalladium (Pd) and/or platinum (Pt). Any combination ofcobalt-iron-boron (CoFeB), (Co/Ni) multilayer, (Co/X) multilayer,(CoFe/X) multilayer and (CoFeB/X) multilayer may also be provided. The(Co/X) multilayer, the (CoFe/X) multilayer and the (CoFeB/X) multilayermay include a plurality of a bilayer structure having a first layer ofmaterial (Co, CoFe and CoFeB respectively) and a second layer of Pdand/or Pt. As a non-limiting example, the ferromagnetic hard layer 306may include (CoFe/Pd)₅, of 5 layers of CoFe arranged alternately with 5layers of Pd, i.e. (CoFe/Pd/CoFe/Pd/CoFe/Pd/CoFe/Pd/CoFe/Pd).

In various embodiments, the ferromagnetic hard layer 306 may have athickness of between about 3 nm and about 50 nm, e.g. between about 3 nmand about 20 nm, between about 3 nm and about 10 nm, between about 10 nmand about 50 nm, between about 30 nm and about 50 nm or between about 5nm and about 20 nm.

While FIG. 3A illustrates that the ferromagnetic hard layer 306 isarranged beneath the ferromagnetic layer 302 and the ferromagnetic layer304, it should be appreciated that other arrangements of theferromagnetic layer 302, the ferromagnetic layer 304 and theferromagnetic hard layer 306 may be possible.

FIG. 3B shows a schematic cross-sectional view of an oscillatingferromagnetic structure 320, according to various embodiments. Theoscillating ferromagnetic structure 320 includes a ferromagnetic layer302 with a perpendicular anisotropy component, a ferromagnetic layer 304with an in-plane anisotropy component and a ferromagnetic hard layer 306with a perpendicular anisotropy component, the ferromagnetic layer 302,the ferromagnetic layer 304 and the ferromagnetic hard layer 306arranged one over the other. The ferromagnetic layer 302, theferromagnetic layer 304 and the ferromagnetic hard layer 306 may be asdescribed in the context of the embodiments of FIG. 3A.

The oscillating ferromagnetic structure 320 further includes aseparating layer 308 arranged in between the ferromagnetic layer 302 andthe ferromagnetic layer 304. The oscillating ferromagnetic layer 300further includes a separating layer 310 arranged in between theferromagnetic layer 304 and the ferromagnetic hard layer 306. Theseparating layers 308, 310 may be as described in the context of theembodiments of FIG. 3A.

The oscillating ferromagnetic structure 320 may further include anantiferromagnetic (AFM) layer 322, where the ferromagnetic hard layer306 may be arranged over or stacked on top of the antiferromagneticlayer 322, which pins the magnetization of the ferromagnetic hard layer306.

In various embodiments, the antiferromagnetic layer 322 may include amaterial of X-manganese or X-Y-manganese, wherein each of X and Y may beplatinum (Pt), palladium (Pd), iridium (Ir), rhodium (Rh) or ruthenium(Ru).

In various embodiments, the antiferromagnetic layer 322 may have athickness in a range of between about 5 nm and about 20 nm, for examplebetween about 5 nm and about 15 nm, between about 5 nm and about 10 nmor between about 10 nm and about 20 nm.

FIG. 3C shows a schematic cross-sectional view of an oscillatingferromagnetic structure 330, according to various embodiments, duringoperation, or in-motion or oscillating mode (e.g. when a current or avoltage is applied across the oscillating ferromagnetic structure 330).The oscillating ferromagnetic structure 330 includes a ferromagneticlayer 332 with a perpendicular anisotropy component and a ferromagnetichard layer 334 with an in-plane anisotropy component, the ferromagneticlayer 332 and the ferromagnetic hard layer 334 arranged one over theother. In other words, the ferromagnetic layer 332 has a magnetizationorientation configured to orient in a direction at least substantiallyperpendicular to a plane defined by an interface, for example aninterface between the ferromagnetic layer 332 and the ferromagnetic hardlayer 334. The ferromagnetic hard layer 334 has a magnetizationorientation configured to orient in a direction at least substantiallyparallel to a plane defined by an interface, for example an interfacebetween the ferromagnetic layer 332 and the ferromagnetic hard layer334. As a non-limiting example, FIG. 3C illustrates that theferromagnetic layer 332 is arranged or stacked on top of theferromagnetic hard layer 334.

As shown in FIG. 3C, during operation or during in-motion or oscillatingmode, the magnetization orientation of the ferromagnetic layer 332 mayoscillate or precess in a direction, such as a cone direction or adirection resembling a cone, in response to a current or a voltageapplied across the oscillating ferromagnetic structure 330 so as tochange the magnetization orientation of a corresponding ferromagneticsoft layer, for example due to spin transfer torque. As a non-limitingexample, with reference to FIGS. 2A and 3C, the structure of the firstoscillating ferromagnetic structure 206 a may be that of the oscillatingferromagnetic structure 330. Where the first oscillating ferromagneticstructure 206 a is configured such that the magnetization orientation ofthe first oscillating ferromagnetic structure 206 a oscillates in adirection, e.g. the cone direction as represented by the arrow 207 a(e.g. clockwise direction), the magnetization orientation of theferromagnetic layer 332 oscillates in a similar clockwise direction, asrepresented by the arrow 333 a. Where the first oscillatingferromagnetic structure 206 a is configured such that the magnetizationorientation of the first oscillating ferromagnetic structure 206 aoscillates in a direction, e.g. the cone direction as represented by thearrow 207 b (e.g. anti-clockwise direction), the magnetizationorientation of the ferromagnetic layer 332 oscillates in a similaranti-clockwise direction, as represented by the arrow 333 b. In variousembodiments, the direction of the in-plane anisotropy (e.g. in the leftor right direction) of the ferromagnetic hard layer 334 may affect thedirection of the oscillation of the ferromagnetic layer 332 (e.g.clockwise direction 333 a or anti-clockwise direction 333 b).

In various embodiments, the ferromagnetic layer 332 may be ‘softer’(i.e. ferromagnetically softer) than the ferromagnetic hard layer 334.In various embodiments, the ferromagnetic layer 332 may or may not be‘softer’ (i.e. ferromagnetically softer) than the ferromagnetic softlayers (e.g. 204 a, 204 b, 224).

The oscillating ferromagnetic structure 330 further includes aseparating layer 336 arranged in between the ferromagnetic layer 332 andthe ferromagnetic hard layer 334. In various embodiments, the separatinglayer 336 may be of a conductive and non-magnetic material (e.g. Cu, Agor Au). In various embodiments, the separating layer 336 may have athickness of at least 1.5 nm, for example a thickness of between about1.5 nm and 20 nm, e.g. between about 1.5 nm and 10 nm, between about 1.5nm and 5 nm, between about 5 nm and 20 nm or between about 5 nm and 10nm.

In various embodiments, the ferromagnetic layer 332 may include amaterial having at least one of iron (Fe), cobalt (Co) and nickel (Ni)elements, for example cobalt-iron-boron (CoFeB), (Co/Ni) multilayer,(Co/X) multilayer, (CoFe/X) multilayer, (CoFeB/X) multilayer where X ispalladium (Pd) and/or platinum (Pt). Any combination ofcobalt-iron-boron (CoFeB), (Co/X) multilayer, (Co/Ni) multilayer,(CoFe/X) multilayer and (CoFeB/X) multilayer may also be provided. The(Co/X) multilayer, the (CoFe/X) multilayer and the (CoFeB/X) multilayermay include a plurality of a bilayer structure having a first layer ofmaterial (Co, CoFe and CoFeB respectively) and a second layer of Pdand/or Pt. As a non-limiting example, the ferromagnetic layer 332 mayinclude (CoFe/Pd)₅, of 5 layers of CoFe arranged alternately with 5layers of Pd, i.e. (CoFe/Pd/CoFe/Pd/CoFe/Pd/CoFe/Pd/CoFe/Pd).

In various embodiments, the ferromagnetic layer 332 may have a thicknessin a range of between about 0.3 nm and about 4 nm, for example betweenabout 0.3 nm and about 2 nm, between about 0.3 nm and about 1 nm orbetween about 1 nm and about 4 nm.

In various embodiments, the ferromagnetic hard layer 334 may be a singleferromagnetic layer or a synthetic antiferromagnetic layer (SAF). Invarious embodiments, the ferromagnetic hard layer 334 may include amaterial, including but not limited to cobalt (Co), cobalt-iron (CoFe),cobalt-iron-boron (CoFeB) or any combinations thereof.

In embodiments where the ferromagnetic hard layer 334 may be a syntheticantifferomagnetic layer (SAF), the SAF may include twoantiferromagnetically coupled ferromagnetic layers, pinned by anantiferromagnetic layer. A metal separating layer, for example aconductive and non-magnetic separating layer (e.g. ruthenium (Ru)) maybe sandwiched in between the two antiferromagnetically coupledferromagnetic layers. As a non-limiting example, the syntheticantiferromagnetic layer may have a structure or arrangement having twoferromagnetic layers, with a metal separating layer havingRuderman-Kittel-Kasuya-Yosida (RKKY) coupling, such as but not limitedto ruthenium (Ru), sandwiched in between the two ferromagnetic layers.One of the ferromagnetic layers may be a reference layer while the otherferromagnetic layer is a pinned layer, and in contact with anantiferromagnetic layer (e.g. including a material including X-manganeseor X-Y-manganese, wherein each of X and Y is selected from the groupconsisting of platinum (Pt), palladium (Pd), iridium (Ir), rhodium (Rh)and ruthenium (Ru)). By employing the metal separating layer with anappropriate thickness, the magnetization orientations of the twoferromagnetic layers, may be anti-aligned (i.e. the layers may beantiferromagnetically coupled). In various embodiments, the SAF may pinthe reference layer and may reduce stray magnetic field that may act onthe ferromagnetic soft layer (e.g. 204 a, 204 b, 224).

In various embodiments, the ferromagnetic hard layer 334 may have athickness in a range of between about 0.5 nm and about 4 nm, for examplebetween about 0.5 nm and about 2 nm, between about 0.5 nm and about 1 nmor between about 1 nm and about 4 nm.

FIG. 3D shows a schematic cross-sectional view of an oscillatingferromagnetic structure 340, according to various embodiments. Theoscillating ferromagnetic structure 340 includes a ferromagnetic layer332 with a perpendicular anisotropy component and a ferromagnetic hardlayer 334 with an in-plane anisotropy component, the ferromagnetic layer332 and the ferromagnetic hard layer 334 arranged one over the other.The ferromagnetic layer 332 and the ferromagnetic hard layer 334 may beas described in the context of the embodiments of FIG. 3C.

The oscillating ferromagnetic structure 340 further includes aseparating layer 336 arranged in between the ferromagnetic layer 332 andthe ferromagnetic hard layer 334. The separating layer 336 may be asdescribed in the context of the embodiments of FIG. 3C.

The oscillating ferromagnetic structure 340 may further include anantiferromagnetic layer 342, where the ferromagnetic hard layer 334 maybe arranged over or stacked on top of the antiferromagnetic layer 342,which pins the magnetization of the ferromagnetic hard layer 334.

In various embodiments, the antiferromagnetic layer 342 may include amaterial of X-manganese or X-Y-manganese, wherein each of X and Y may beplatinum (Pt), palladium (Pd), iridium (Ir), rhodium (Rh) or ruthenium(Ru).

In various embodiments, the antiferromagnetic layer 342 may have athickness in a range of between about 5 nm and about 20 nm, for examplebetween about 5 nm and about 15 nm, between about 5 nm and about 10 nmor between about 10 nm and about 20 nm.

In various embodiments, the physics of the switching process lies in thespin transfer from a polarized electric current to a ferromagneticlayer, and the spin from the polarized current may exert a “torque”which acts to reverse the magnetization of the ferromagnetic layer. Themechanism of the spin torque transfer may be governed by the Slonczewskispin torque term or other symmetric/asymmetric factor torque terms.

As the switching time may be strongly correlated to the magnitude of thespin torque, it would be desirable to increase the average spin torquemagnitude during the magnetization reversal process, and themagnetoresistive device of various embodiments may achieve this effectin two ways. Firstly, the incorporation of one or more oscillatingferromagnetic structures (e.g. 206 a, 206 b, 226) act as another sourceof spin torque, in addition to the ferromagnetic hard layer (e.g. 202,222). Secondly, the oscillating nature of the oscillating ferromagneticstructures may increase the average angle between the magnetizationvectors or orientations of the oscillating ferromagnetic structures andthe ferromagnetic soft layers (e.g. 204 a, 204 b, 224), as compared tothe use of a static polarizer. The oscillating ferromagnetic structuresmay provide the required oscillating polarizer dynamics which may assistin the spin torque switching, for example in perpendicular anisotropicmagnetoresistive devices.

FIG. 4 shows different configurations of magnetization and polarizationduring the switching process. As shown by the configurations of FIG. 4of magnetization vector {right arrow over (m)}, as represented by thearrow 400, of a ferromagnetic soft layer (free layer) (e.g. layer 206 a,206 b, 226) with respect to the vector {right arrow over (P)}, asrepresented by the arrow 402, of a polarizer (e.g. layers 202, 222), thepolarization {right arrow over (P)} needs to oscillate in order toincrease the spin torque magnitude. The arrow as represented by 404shows the direction the polarizer should move in order to increase thespin torque magnitude (i.e. the arrow 404 indicates the oscillation ofthe polarization vector {right arrow over (P)} 402. The circle asrepresented by 406 shows the result of the vector which is the wedgeproduct of the magnetization vector {right arrow over (m)} 400 and thepolarization vector {right arrow over (P)} 402 (i.e. {right arrow over(m)}̂{right arrow over (P)}). The vector 406 is perpendicular to both themagnetization vector {right arrow over (m)} 400 and the polarizationvector {right arrow over (P)} 402. The circle 406 including a dot in thecentre represents a direction pointing out of the page, while the circle406 including a cross within the circle 406 represents a directionpointing into the page. The arrow as represented by 408 shows the resultof the operation ({right arrow over (m)}̂({right arrow over (m)}̂{rightarrow over (P)})). The symbol “̂” represents the wedge product ofvectors.

The polarizer or polarization direction 402 denotes the spinpolarization of the electrons acquired from passing through a precedinglayer of a free layer or a ferromagnetic soft layer, or from backscattering from a succeeding layer of a free layer or a ferromagneticsoft layer, when considered from the perspective of the path of flow ofelectrons. In the scheme of Frequency-Induced Spin Torque Switching(FISTS) as described below, the polarization may be due to, but notlimited to, the oscillating ferromagnetic structure (e.g. 206 a, 206 b,226).

In various embodiments, by applying the appropriate oscillatingfrequency to the polarizer so that the angle between {right arrow over(m)} 400 and {right arrow over (P)} 402 may be optimized in theswitching process, increased switching speed may be achieved, whilereducing the current asymmetry of the P→AP and AP→P processes. Thisscheme may be referred to as Frequency-Induced Spin Torque Switching(FISTS), and which forms the basis for the magnetoresistive devices ofvarious embodiments, for example as that illustrated in FIG. 2A, wherethe first oscillating ferromagnetic structure 206 a and the secondoscillating ferromagnetic structure 206 b may provide the requiredoscillating polarizer dynamics which may assist in the spin torqueswitching, for example in perpendicular anisotropic magnetoresistivedevices. For implementing FISTS, it is desirable that the firstoscillating ferromagnetic structure 206 a and the second oscillatingferromagnetic structure 206 b oscillate or precess with a fixeddirection (e.g. a fixed cone direction) for both positive and negativewriting currents, so that the spin torque induced, generated or providedby the first oscillating ferromagnetic structure 206 a and the secondoscillating ferromagnetic structure 206 b may aid in the switching ofboth P→AP and AP→P for the ferromagnetic soft layers.

The switching performance of the magnetoresistive devices of variousembodiments may be investigated using macrospin simulations, based onthe Frequency-Induced Spin Torque Switching (FISTS) scheme. One or moreof the following parameters may be used for the macrospin simulation:

-   -   γ:gyromagnetic ratio=1.76×10¹¹ T⁻¹ s⁻¹ (1.76×10⁷ Oe⁻¹ s⁻¹)    -   M_(s): saturation magnetization=0.7×10⁶ A/m (700 emu/cm³)    -   α: Gilbert damping constant=0.01    -   t: thickness=2 nm    -   P_(ref): Polarizer (or reference layer) polarization factor=0.4    -   P_(osc): Oscillator (or oscillating ferromagnetic structure)        polarization factor=0.4    -   H_(k): Free layer (or ferromagnetic soft layer) perpendicular        anisotropic field=1 T

It should be appreciated that in some measurements, one or more of theabove-mentioned parameters may be varied.

The results for magnetoresistive devices based on the FrequencySelection Switching Scheme (FSSS) will now be described by way of thefollowing non-limiting examples.

FIG. 5 shows a plot 500 of macrospin simulation results of the criticalcurrent for P→AP (denoted by 502) and AP→P (denoted by 504) respectivelywhen a 3 GHz oscillation is applied, according to various embodiments.The ferromagnetic soft layer is initially set to have a very small tiltof about 1° from the perpendicular axis. As shown in FIG. 5, there is areduction in the critical current, J_(C), when a 3 GHz oscillation isapplied, for both J_(C) ^(P) ^(→) ^(AP) and |J_(C) ^(AP) ^(→) ^(P)|. Inaddition, there is a sharp reduction of switching current asymmetry whenthe additional polarizer (e.g. oscillating ferromagnetic structure) isoscillating close to resonance frequency. In the context of variousembodiments, the resonance frequency refers to the oscillating frequencyof the oscillating ferromagnetic structure at which the correspondingferromagnetic soft layer may switch with the smallest critical currentfor a given pulse length and amplitude, or equivalently may switch inthe fastest time for a given current pulse time width and amplitude. Invarious embodiments, the resonance frequency may be but not limited to 3GHz. The frequency of 3 GHz may also represent the optimum magnetizationswitching frequency of the corresponding ferromagnetic soft layer, whichmay be similar to the resonance frequency of the ferromagnetic softlayer.

As illustrated in FIG. 5, the oscillation frequency may be tuned orselected so that the ferromagnetic soft layer may switch optimally atits resonance frequency for both P→AP 502 and AP→P 504 via FISTS.Therefore, through selection of the frequency of the respectiveoscillation ferromagnetic structures, the respective correspondingferromagnetic soft layers may be switched independently. Such aFrequency Selection Switching Scheme (FSSS) may help to address anyrelated overwriting issue that may occur in multi-bit per cell STT-MRAM.

For the Frequency Selection Switching Scheme (FSSS) to be employed formulti-bit per cell STT-MRAM, the frequency bandwidth should bereasonably narrow so that the selection of the frequency of therespective oscillation ferromagnetic structures for switching thecorresponding ferromagnetic soft layers may be optimal. FIG. 6 shows aplot 600 of macrospin simulation results of the relationship between thefrequency bandwidth and the applied current density for P→AP (denoted by602) and AP→P (denoted by 604) switchings, according to variousembodiments, in a single magnetoresistive (e.g. GMR or TMR) device. FIG.6 shows that by changing the applied current density, it may be possibleto control the frequency bandwidth for both P→AP 602 and AP→P 604switchings.

In various embodiments, besides controlling the frequency bandwidth, itis also possible to adjust the resonance frequency of the ferromagneticsoft layer over a wide range. This may be helpful for magnetoresistivedevices with a plurality of ferromagnetic soft layers, where individualferromagnetic soft layers may be switched at different frequencies.

FIG. 7 shows a plot 700 of macrospin simulation results of therelationship between the optimum magnetization switching frequency,where switching occurs at the lowest current amplitude, and theperpendicular anisotropy field, H_(k), for P→AP (denoted by 702) andAP→P (denoted by 704) switchings, according to various embodiments.H_(k) has been varied from 0.95 T to 1.10 T, with an applied constantcurrent density, J, of approximately 1.0×10⁷ A/cm², with a pulse widthof about 2 ns.

As shown in FIG. 7, the optimum magnetization switching frequency has anat least substantially linear dependence on the perpendicular magneticanisotropy field, H_(k), for both P→AP 702 and AP→P 704 switchings. Theresults indicate that by having different values of H_(k) for differentferromagnetic soft layers, it may be possible to switch theirmagnetizations at different frequencies.

In various embodiments, it may also be possible to adjust the optimummagnetization switching frequency by changing the saturationmagnetization, M_(s), of the oscillating ferromagnetic structure and/orthickness, t, of the oscillating ferromagnetic structure.

In order to show the feasibility of using a selective frequency toswitch different ferromagnetic soft layers, H_(k) may be varied whilefixing all other parameters. FIG. 8 shows a plot 800 of macrospinsimulation results of the relationship between the switching time andthe applied oscillation frequency for P→AP and AP→P switchings fordifferent perpendicular anisotropy fields, H_(k), according to variousembodiments. The applied constant current density, J, is approximately1.0×10⁷ A/cm², with a pulse width of about 2 ns. The plot 800 shows theresults for P→AP switching for H_(k)=0.95 T 802 a, H_(k)=1.01 T 804 aand H_(k)=1.06 T 806 a, and the results for AP→P switching forH_(k)=0.95 T 802 b, H_(k)=1.01 T 804 b and H_(k)=1.06 T 806 b. Theresults illustrate the separability of the ferromagnetic soft layers'frequency bandwidths.

In various embodiments, independent switching of the magnetizations oftwo ferromagnetic soft layers using two different switching currentamplitudes (e.g. J_(low) and J_(high)) may be possible, where forexample, the resonance frequency of one ferromagnetic soft layer (e.g.free layer 1) is low, while the resonance frequency of the otherferromagnetic soft layer (e.g. free layer 2) is high, and that theresonance frequencies are sufficiently far apart.

As a non-limiting example, when J_(low) is applied, the oscillatingferromagnetic structures have a low frequency, and FISTS may be optimalfor free layer 1, due to its low resonance frequency, but not for freelayer 2, and hence switching only occurs for free layer 1. In a similarmanner, when J_(high) is applied, the oscillating ferromagneticstructures have a high frequency, and FISTS may be optimal for freelayer 2, due to its high resonance frequency, but not for free layer 1,and hence switching only occurs for free layer 2. The frequencies needto be sufficiently far apart so that the frequency bandwidths of the twoferromagnetic soft layer s do not overlap at the operating currentamplitudes.

FIG. 9A shows plots of macrospin simulation results of the respectiveperpendicular magnetization components, Mz, of two ferromagnetic softlayers for a 2-bit STT-MRAM device, as a function of time, according tovarious embodiments. The perpendicular anisotropy field, H_(k), and thethickness, t, may be varied for the two ferromagnetic soft layers, withall other parameters kept constant, so as to change the optimumswitching frequencies. The parameters corresponding to one ferromagneticsoft layer (e.g. free layer 1) are α₁=0.01, M_(S1)=1000 emu/cm³,γ₁=1.76×10⁷ Oe⁻¹ s⁻¹, H_(k1)=1.5 T, t₁=1.2 nm, P_(ref)=0.4,P_(osc1)=0.4, while the parameters corresponding to the otherferromagnetic soft layer (e.g. free layer 2) are α₂=0.01, M_(S2)=1000emu/cm³, γ₂=1.76×10⁷ Oe⁻¹ s⁻¹, H_(k2)=1.4 T, t₂=1.5 nm, P_(ref)=0.4,P_(osc2)=0.4. The applied constant current density, J_(low), isapproximately 6.5×10⁶ A/cm², with a pulse width of about 2 ns.

As shown in FIG. 9A, when J_(low), of approximately 6.5×10⁶ A/cm² isapplied for about 2 ns, the switching of the magnetization of free layer1 does not occur for both P→AP 902 a and AP→P 902 b. On the other hand,under the same conditions, magnetization switching for free layer 2occurs for both P→AP 904 a and AP→P 904 b.

FIG. 9B shows plots of macrospin simulation results of the respectiveperpendicular magnetization components, Mz, of two ferromagnetic softlayers for a 2-bit STT-MRAM device, as a function of time, according tovarious embodiments. The perpendicular anisotropy field, H_(k), and thethickness, t, may be varied for the two ferromagnetic soft layers, withall other parameters kept constant, so as to change the optimumswitching frequencies. The parameters corresponding to one ferromagneticsoft layer (e.g. free layer 1) are α₁=0.01, M_(S1)=1000 emu/cm³,γ₁=1.76×10⁷ Oe⁻¹ s⁻¹, H_(k1)=1.5 T, t₁=1.2 nm, P_(ref)=0.4,P_(osc1)=0.4, while the parameters corresponding to the otherferromagnetic soft layer (e.g. free layer 2) are α₂=0.01, M_(S2)=1000emu/cm³, γ₂=1.76×10⁷ Oe⁻¹ s⁻¹, H_(k2)=1.4 T, t₂=1.5 nm, P_(ref)=0.4,P_(osc2)=0.4. The applied constant current density, J_(high), isapproximately 1.0×10⁷ A/cm², with a pulse width of about 1.5 ns.

As shown in FIG. 9B, when J_(high), of approximately 1.0×10⁷ A/cm² isapplied for about 1.5 ns, the switching of the magnetization of freelayer 1 occurs for both P→AP 912 a and AP→P 912 b. On the other hand,under the same conditions, magnetization switching for free layer 2 doesnot occur for both P→AP 914 a and AP→P 914 b.

The results of FIGS. 9A and 9B illustrate the possibility of independentswitching of magnetizations of two ferromagnetic soft layers (or freelayers) having different properties.

The results for magnetoresistive devices based on the OscillatorSelection Switching Scheme (OSSS) will now be described by way of thefollowing non-limiting examples.

FIG. 10 shows a plot 1000 of an oscillator's frequency as a function ofapplied current density. FIG. 10 illustrates that an out-of-plane spintorque oscillator has two critical current densities, and oscillationsonly occur within the range 1002 of applied current densities betweenthe two critical current densities.

For the Oscillator Selection Switching Scheme (OSSS) to be employed formulti-bit per cell STT-MRAM, the operating current amplitudes may bechosen such that only one oscillator or oscillating ferromagneticstructure is oscillating (hereinafter referred as “ON”), while theremaining oscillators or oscillating ferromagnetic structure are notoscillating (hereinafter referred as “OFF”), e.g. the current amplitudeapplied is within the range of operating current amplitudes of only oneoscillator.

In various embodiments, the frequency and critical currents of a spintorque oscillating ferromagnetic structure may be controlled viaintrinsic material parameters such as α (Gilbert damping constant),M_(s) (saturation magnetization), H_(k) (perpendicular anisotropy field)and t (thickness) of the oscillating ferromagnetic structure. As anon-limiting example, in embodiments of magnetoresistive devices havingtwo oscillating ferromagnetic structures, the two oscillatingferromagnetic structures may be designed to have different criticalcurrents, and the resonance frequencies of the correspondingferromagnetic soft layers may also be designed and adjusted over a widerange. As shown in FIG. 7, by having ferromagnetic soft layers withdifferent H_(k), the resonance frequencies of the ferromagnetic softlayers may be tuned to match the frequencies of the correspondingoscillating ferromagnetic structures.

FIGS. 11A and 11B show schematic cross-sectional views of themagnetoresistive device 200 of FIG. 2A employing OSSS, in operation,according to various embodiments, using the switching currentamplitudes, J_(low) and J_(high), respectively. The ferromagnetic softlayers are referred to as FLs (free layers) and the oscillatingferromagnetic structures are referred to as OLs (oscillating layers).

FIGS. 11A and 11B illustrate the independent switching of themagnetizations of the two ferromagnetic soft layers using two differentswitching current amplitudes (J_(low), and J_(high)), where one of theoscillating ferromagnetic structures is ON while the other oscillatingferromagnetic structure is OFF.

As a non-limiting example, when J_(low) is applied, OL1 206 a may be ONand FISTS is in effect for FL1 204 a, and the magnetization orientationof FL1 204 a switches within the duration of the width of the currentpulse of J_(low) applied. At the same time, OL2 206 b is OFF as theapplied current, J_(low), is too low to induce oscillation in OL2 206 b,and FISTS is not in effect for FL2 204 b, and its magnetizationorientation therefore does not switch.

When J_(high) is applied, OL1 206 a may be OFF as the applied current,J_(high), is too high to induce oscillation in OL1 206 a and FISTS isnot in effect for FL1 204 a, and the magnetization orientation of FL1204 a therefore does not switch within the duration of the width of thecurrent pulse of J_(high), applied. At the same time, OL2 206 b is ONand FISTS is in effect for FL2 204 b, and its magnetization orientationtherefore switches.

FIG. 12A shows plots of macrospin simulation results of the respectiveperpendicular magnetization components, Mz, of two ferromagnetic softlayers for a 2-bit STT-MRAM device, as a function of time, according tovarious embodiments. The parameters corresponding to both ferromagneticsoft layers (e.g. free layers 1 and 2) are α=0.01, M_(S)=1100 emu/cm³,γ=1.76×10⁷ Oe⁻¹ s⁻¹, H_(k)=1.6 T, t=1.2 nm, P_(ref)=0.4, P_(osc)=0.4.The applied constant current density, J_(low), is approximately 6.5×10⁶A/cm², with a pulse width of about 2 ns. The oscillating ferromagneticstructures corresponding to free layer 1 and free layer 2 are ON and OFFrespectively, at this applied current density, J_(low).

As shown in FIG. 12A, when J_(low), of approximately 6.5×10⁶ A/cm² isapplied for about 2 ns, the switching of the magnetization orientationof free layer 1 occurs for both P→AP 1202 a and AP→P 1202 b. On theother hand, under the same conditions, magnetization switching for freelayer 2 does not occur for both P→AP 1204 a and AP→P 1204 b.

FIG. 12B shows plots of macrospin simulation results of the respectiveperpendicular magnetization components, Mz, of two ferromagnetic softlayers for a 2-bit STT-MRAM device, as a function of time, according tovarious embodiments. The parameters corresponding to both ferromagneticsoft layers (e.g. free layers 1 and 2) are α=0.01, M_(S)=1100 emu/cm³,γ=1.76×10⁷ Oe⁻¹ s⁻¹, H_(k)=1.6 T, t=1.2 nm, P_(ref)=0.4, P_(osc)=0.4.The applied constant current density, J_(high), is approximately 1.0×10⁷A/cm², with a pulse width of about 1.5 ns. The oscillating ferromagneticstructures corresponding to free layer 1 and free layer 2 are OFF and ONrespectively, at this applied current density, J_(high).

As shown in FIG. 12B, when J_(high), of approximately 1.0×10⁷ A/cm² isapplied for about 1.5 ns, the switching of the magnetization orientationof free layer 1 does not occur for both P→AP 1212 a and AP→P 1212 b. Onthe other hand, under the same conditions, magnetization switching forfree layer 2 occurs for both P→AP 1214 a and AP→P 1214 b.

The results of FIGS. 12A and 12B illustrate the possibility ofindependent switching of magnetizations of two ferromagnetic soft layers(or free layers) where the corresponding oscillating ferromagneticstructures have different properties. The two ferromagnetic soft layersmay be identical or at least substantially similar, e.g. in terms ofproperties and parameters.

Various embodiments may provide n-bit per cell STT-MRAMs (e.g. n≧1, e.g.1, 2, 3, 4, 5, 6 or any higher number) based on the Frequency SelectionSwitching Scheme (FSSS) or the Oscillator Selection Switching Scheme(OSSS). The n-bit per cell STT-MRAMs may be formed based on themagnetoresistive device 200 (FIG. 2A), being a 2-bit STT-MRAM(hereinafter referred as “S2”), and/or the magnetoresistive device 220(FIG. 2B), being a 1-bit STT-MRAM (hereinafter referred as “S1”).Therefore, any n-bit per cell STT-MRAM may be achieved by arranging orstacking an appropriate number of S1 (e.g. magnetoresistive device 220)and/or S2 (e.g. magnetoresistive device 200), one over the other in astack, so that there are n bits in the overall stack.

Adjacent stack arrangements of S1s and/or S2s (e.g. adjacent S1/S1,S2/S2 and S1/S2) may be separated by a stack separating layer of aconductive and non-magnetic material, including but not limited to oneor more of copper (Cu), silver (Ag), gold (Au), tantalum (Ta), chromium(Cr), palladium (Pd), platinum (Pt) or ruthenium (Ru). However, itshould be appreciated that the stack separating layer between adjacentstacks may alternatively be of a non-conductive and non-magneticmaterial, including but not limited to one or more of magnesium oxide(MgO), aluminium oxide (AlO_(x)), or titanium oxide (TiO_(x)).

In various embodiments, the n-bit per cell STT-MRAM may be a giantmagnetoresistance (GMR) device, with all the separating layers in theoverall stack being of a conductive and non-magnetic material.

FIG. 13A shows a schematic cross-sectional view of a magnetoresistivedevice 1300, according to various embodiments, illustrating anon-limiting example of a 3-bit spin transfer torque magnetoresistiverandom access memory (STT-MRAM), for implementation using the FrequencySelection Switching Scheme (FSSS) or the Oscillator Selection SwitchingScheme (OSSS).

The magnetoresistive device 1300 may be a giant magnetoresistive (GMR)device or a tunneling magnetoresistive (TMR) device, e.g. a spintransfer torque magnetic random access memory (STT-MRAM) withperpendicular anisotropy. The magnetoresistive device 1300 has a stackstructure, having for example a plurality of ferromagnetic layers.

As a non-limiting example, the magnetoresistive device 1300 may includethe stack arrangement of the magnetoresistive device 200 (i.e. S2),which may be as described in the context of the embodiments of FIG. 2A,to provide 2 bits per cell. An additional stack arrangement of aferromagnetic hard layer 222, a ferromagnetic soft layer 224, and anoscillating ferromagnetic structure 226, e.g. of the magnetoresistivedevice 220 (i.e. S1), which may be as described in the context of theembodiments of FIG. 2B, may be arranged on top of the magnetoresistivedevice 200, to provide an additional 1 bit (i.e. an S1 stacked on top ofan S2). The magnetoresistive device 1300 further includes a stackseparating layer 1302 of a conductive and non-magnetic material (e.g.Cu) or a non-conductive and non-magnetic material (e.g. MgO). In furtherembodiments, the magnetoresistive device 200 (i.e. S2) may alternativelybe arranged on top of the magnetoresistive device 220 (i.e. S1) (i.e. anS2 stacked on top of an S1).

FIG. 13B shows a schematic cross-sectional view of a magnetoresistivedevice 1310, according to various embodiments, illustrating a furthernon-limiting example of a 3-bit spin transfer torque magnetoresistiverandom access memory (STT-MRAM), for implementation using the FrequencySelection Switching Scheme (FSSS) or the Oscillator Selection SwitchingScheme (OSSS). The magnetoresistive device 1310 is similar to themagnetoresistive device 1300, except that the positions of theferromagnetic hard layer 222 and the oscillating ferromagnetic structure226 are interchanged. In further embodiments, the magnetoresistivedevice 200 (i.e. S2) may alternatively be arranged on top of themagnetoresistive device 220 (i.e. S1).

In further embodiments, other stack configurations may be provided torealise a

3-bit STT-MRAM, e.g. by arranging three magnetoresistive devices 220(i.e. three S1s) one over the other.

FIG. 14 shows a schematic cross-sectional view of a magnetoresistivedevice 1400, according to various embodiments, illustrating anon-limiting example of a 4-bit spin transfer torque magnetoresistiverandom access memory (STT-MRAM), for implementation using the FrequencySelection Switching Scheme (FSSS) or the Oscillator Selection SwitchingScheme (OSSS).

The magnetoresistive device 1400 may be a giant magnetoresistive (GMR)device or a tunneling magnetoresistive (TMR) device, e.g. a spintransfer torque magnetic random access memory (STT-MRAM) withperpendicular anisotropy. The magnetoresistive device 1400 has a stackstructure, having for example a plurality of ferromagnetic layers.

As a non-limiting example, the magnetoresistive device 1400 may includethe stack arrangement of the magnetoresistive device 200 (i.e. S2),which may be as described in the context of the embodiments of FIG. 2A,to provide 2 bits per cell. An additional stack arrangement of amagnetoresistive device 1401, may be arranged on top of themagnetoresistive device 200, to provide additional 2 bits (i.e. two S2stacked over each other). The magnetoresistive device 1401 includes aferromagnetic hard layer 1402, two ferromagnetic soft layers 1404 a,1404 b, arranged adjacent to the ferromagnetic hard layer withrespective separating layers 1408 a, 1408 b in between, and twooscillating ferromagnetic structures 1406 a, 1406 b arranged adjacent tothe corresponding ferromagnetic soft layers 1404 a, 1404 b, withrespective separating layers 1410 a, 1410 b in between. Themagnetoresistive device 1401 may be similar to the magnetoresistivedevice 200 as described in the context of the embodiments of FIG. 2A.The magnetoresistive device 1400 further includes a stack separatinglayer 1412 of a conductive and non-magnetic material (e.g. Cu) or anon-conductive and non-magnetic material (e.g. MgO). In furtherembodiments, the magnetoresistive device 200 (i.e. S2) may alternativelybe arranged on top of the magnetoresistive device 1401 (i.e. S2).

In further embodiments, other stack configurations may be provided torealise a

4-bit STT-MRAM, e.g. by arranging four magnetoresistive devices 220(i.e. four S1s) one over the other, or arranging a magnetoresistivedevice 200 or 1401 (i.e. one S2) and two magnetoresistive devices 220(i.e. two S1s), one over the other.

In the context of various embodiments, the FSSS writing scheme may helpto switch the magnetization orientation of each ferromagnetic softlayer, without at least substantially affecting the remainingferromagnetic soft layer(s). The FSSS writing scheme is based onfrequency selection for each ferromagnetic soft layer, where thefrequency may be close to or equal to a resonance frequency of theferromagnetic soft layer, which may be tailored through the intrinsicproperties of each ferromagnetic soft layer.

In the context of various embodiments, the OSSS writing scheme may helpto switch the magnetization orientation of each ferromagnetic softlayer, without at least substantially affecting the remainingferromagnetic soft layer(s). The OSSS writing scheme is based onoscillator selection for each ferromagnetic soft layer, for exampleusing the property of critical currents to turn each oscillator oroscillating ferromagnetic structure corresponding to a ferromagneticsoft layer, ON or OFF independently.

While the invention has been particularly shown and described withreference to specific embodiments, it should be understood by thoseskilled in the art that various changes in form and detail may be madetherein without departing from the spirit and scope of the invention asdefined by the appended claims. The elements of the various embodimentsmay be incorporated into each of the other species to obtain thebenefits of those elements in combination with such other species, andthe various beneficial features may be employed in embodiments alone orin combination with each other. The scope of the invention is thusindicated by the appended claims and all changes which come within themeaning and range of equivalency of the claims are therefore intended tobe embraced.

1. A writing method for a magnetoresistive device having a firstferromagnetic soft layer and a second ferromagnetic soft layer, themethod comprising: applying a signal with a magnetization switchingfrequency which is within either a range of magnetization switchingfrequencies of the first ferromagnetic soft layer or a range ofmagnetization switching frequencies of the second ferromagnetic softlayer.
 2. A writing method for a magnetoresistive device having a firstoscillating ferromagnetic structure and a second oscillatingferromagnetic structure, the method comprising: applying a signal withan operating current amplitude which is within either a range ofoperating current amplitudes at which oscillations are induced for thefirst oscillating ferromagnetic structure or a range of operatingcurrent amplitudes at which oscillations are induced for the secondoscillating ferromagnetic structure.